N. B Lukyanchikova

Single Defect Studies by Means of Random Telegraph Signals in Submicron Silicon MOSFETs

Cor Claeys, Eddy Simoen, M. Petrichuk, 1999 .

Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Eddy Simoen, C. Claeys, Abdelkarim Mercha, 2003 .

High-energy proton irradiation induced changes in the linear-kink noise overshoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Eddy Simoen, Abdelkarim Mercha, Joan Marc Rafí, 2004 .

Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density

Eddy Simoen, C. Claeys, N. P Garbar, 2000 .

Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface

Cor Claeys, Eddy Simoen, M. Petrichuk, 1999 .

Evidence for a linear kink effect in ultra-thin gate oxide SOI MOSFETs

E. Simoen, C. Claeys, Abdelkarim Mercha, 2003 .