Y.K. Chen

Comparisons of microwave performance between single-gate and dual-gate MODFETs

G.W. Wang, L.F. Eastman, Y.K. Chen, 1988, IEEE Electron Device Letters.

IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers

G.W. Wang, P.J. Tasker, L.F. Eastman, 1987, IEEE Transactions on Electron Devices.

Demonstration of submicron depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis

H.S. Tsai, J. Kwo, J. Kuo, 1999, IEEE Electron Device Letters.

Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy

J.S. Weiner, F. Ren, J. Kuo, 1997, IEEE Electron Device Letters.

Enhancement-mode p-channel GaAs MOSFETs on semi-insulating substrates

J. Kwo, A.Y. Cho, F. Ren, 1996, International Electron Devices Meeting. Technical Digest.

Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs

H. Hier, J. B. Kuang, A. Fathimulla, 1988, IEEE Electron Device Letters.