Yi-Wei Lian

101-GHz InAlN/GaN HEMTs on Silicon With High Johnson’s Figure-of-Merit

Shawn S. H. Hsu, Chuan-Wei Tsou, S. Hsu, 2015, IEEE Transactions on Electron Devices.

AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current

Yu-Syuan Lin, S. Hsu, Yu-Syuan Lin, 2012, IEEE Electron Device Letters.