Kyunghwan Lee

Analysis of Failure Mechanisms and Extraction of Activation Energies $(E_{a})$ in 21-nm nand Flash Cells

Myounggon Kang, Hyungcheol Shin, Dong Hua Li, 2013, IEEE Electron Device Letters.

Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

Myounggon Kang, Hyungcheol Shin, Yuchul Hwang, 2014, IEEE Electron Device Letters.

Activation Energies $(E_{a})$ of Failure Mechanisms in Advanced NAND Flash Cells for Different Generations and Cycling

Myounggon Kang, Hyungcheol Shin, Dong Hua Li, 2013, IEEE Transactions on Electron Devices.

An Accurate Compact Model Considering Direct-Channel Interference of Adjacent Cells in Sub-30-nm nand Flash Technologies

Myounggon Kang, Hyungcheol Shin, Byung-Gook Park, 2012, IEEE Electron Device Letters.

Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash Memory

Hyungcheol Shin, Yuchul Hwang, Dong Hua Li, 2013, IEEE Electron Device Letters.