R. Ilangovan

Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance

S. Sakai, R. Ilangovan, S. Sakai, 2004, IEEE Electron Device Letters.

Long-retention ferroelectric-gate FET with a (HfO/sub 2/)/sub x/(Al/sub 2/O/sub 3/)/sub 1-x/ buffer-insulating layer for 1T FeRAM

S. Sakai, R. Ilangovan, M. Takahashi, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..