Nikolay A. Maleev

发表

Characteristics of InGa(N)As VCSELs for fiber optic applications

A. R. Kovsh, Jyh-Shyang Wang, Hung-Pin D. Yang, 2004, SPIE OPTO.

MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates

Alexey E. Zhukov, Mikhail V. Maximov, Victor M. Ustinov, 2003, Saratov Fall Meeting.

1.3-μm edge- and surface-emitting quantum dot lasers grown on GaAs substrates

Nikolai N. Ledentsov, Alexey E. Zhukov, Mikhail V. Maximov, 2002, SPIE OPTO.

High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells

Alexey E. Zhukov, Mikhail V. Maximov, Victor M. Ustinov, 2002, Saratov Fall Meeting.

Passive cavity surface-emitting lasers: option of temperature-insensitive lasing wavelength for uncooled dense wavelength division multiplexing systems

Mikhail V. Maximov, Kent D. Choquette, N. N. Ledentsov, 2016, SPIE OPTO.

Long-wavelength (1.3-1.5 micron) quantum dot lasers based on GaAs

Nikolai N. Ledentsov, Alexey E. Zhukov, Mikhail V. Maximov, 2004, SPIE OPTO.

High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range

Alexey E. Zhukov, Victor M. Ustinov, Nikolai Ledentsov, 2003, SPIE OPTO.

InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2003 .

InAs/InGaAs/GaAs quantum dot lasers of 1.3 /spl mu/m range with high (88%) differential efficiency

Mikhail V. Maximov, A. R. Kovsh, Dieter Bimberg, 2002 .

Anomalous lasing of high-speed 850 nm InGaAlAs oxide-confined vertical-cavity surface-emitting lasers with a large negative gain-to-cavity wavelength detuning

James A. Lott, Philip Moser, A. G. Kuzmenkov, 2014 .

Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2000 .

High external differential efficiency and high optical gain of long-wavelength quantum dot diode laser

Nikolai N. Ledentsov, Mikhail V. Maximov, A. R. Kovsh, 2003 .

Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

A. R. Kovsh, Wilson Sibbett, A. G. Kuzmenkov, 2007 .

Single Mode 1.3 µm InGaAsN/GaAs Quantum Well Vertical Cavity Surface Emitting Lasers Grown by Molecular Beam Epitaxy

A. R. Kovsh, R. S. Hsiao, Chih-Ming Lai, 2004 .

Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs

A. R. Kovsh, R. S. Hsiao, Chih-Hung Chiou, 2005 .

InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm

Mikhail V. Maximov, A. R. Kovsh, James A. Lott, 2000 .

0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Mikhail V. Maximov, A. R. Kovsh, Dieter Bimberg, 2000 .

Reliability performance of 25 Gbit s−1 850 nm vertical-cavity surface-emitting lasers

James A. Lott, N. N. Ledentsov, A. G. Kuzmenkov, 2013 .