M. Hatori

Strained-silicon MOSFETs of low leakage current and high breakdown voltage for analog applications

Y. Hoshino, Y. Kondo, N. Sugii, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Strained-silicon MOSFETs for analog applications: utilizing a supercritical-thickness strained Layer for low leakage current and high breakdown Voltage

Y. Hoshino, Y. Kondo, N. Sugii, 2006, IEEE Transactions on Electron Devices.