T. Oki

A cost-conscious 32nm CMOS platform technology with advanced single exposure lithography and gate-first metal gate/high-k process

N. Matsunaga, K. Taniguchi, M. Inohara, 2008, 2008 IEEE International Electron Devices Meeting.

Identification of electromigration dominant diffusion path for Cu damascene interconnects and effect of plasma treatment and barrier dielectrics on electromigration performance

H. Shibata, T. Hasegawa, H. Shibata, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Competitive and cost effective copper/low-k interconnect (BEOL) for 28nm CMOS technologies

R. Augur, G. Ribes, G. Biery, 2012 .