H. Miyajima

Identification of electromigration dominant diffusion path for Cu damascene interconnects and effect of plasma treatment and barrier dielectrics on electromigration performance

H. Shibata, T. Hasegawa, H. Shibata, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

A plasma damage resistant ultra low-k hybrid dielectric structure for 45nm node copper dual-damascene interconnects

H. Shibata, N. Nakamura, N. Matsunaga, 2004, Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).

The application of simultaneous ebeam cure methods for 65 nm node Cu/low-k technology with hybrid (PAE/MSX) structure

R. Nakata, T. Yoda, H. Miyajima, 2004, Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).

Challenge of low-k materials for 130, 90, 65 nm node interconnect technology and beyond

H. Shibata, H. Kamijo, N. Nakamura, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

BEOL process integration technology for 45 nm node porous low-k/copper interconnects

H. Shibata, N. Nakamura, N. Matsunaga, 2005, Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..

Integration of Cu/low-k dual-damascene interconnects with a porous PAE/SiOC hybrid structure for 65 nm-node high performance eDRAM

H. Shibata, M. Fukasawa, T. Usui, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).