K. Tabuchi

Identification of electromigration dominant diffusion path for Cu damascene interconnects and effect of plasma treatment and barrier dielectrics on electromigration performance

H. Shibata, T. Hasegawa, H. Shibata, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Challenge of low-k materials for 130, 90, 65 nm node interconnect technology and beyond

H. Shibata, H. Kamijo, N. Nakamura, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Integration of Cu/low-k dual-damascene interconnects with a porous PAE/SiOC hybrid structure for 65 nm-node high performance eDRAM

H. Shibata, M. Fukasawa, T. Usui, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).