I. G. McGillivray

Improved measurements of doping profiles in silicon using CV techniques

Anthony J. Walton, A. Walton, J. M. Robertson, 1988 .

EFFECTS OF PROCESS CHEMICAL PURITY ON MOS CAPACITOR ELECTRICAL PARAMETERS.

Anthony J. Walton, A. Walton, J. M. Robertson, 1986 .

Automatic measurement of minority carrier lifetimes in silicon for nonuniform doped samples using the Zerbst method

Anthony J. Walton, J. M. Robertson, I. G. McGillivray, 1987 .