A. Belov

发表

X-ray absorption near-edge structure anomalous behaviour in structures with buried layers containing silicon nanocrystals.

K. N. Pankov, D. Tetelbaum, V. Terekhov, 2014, Journal of synchrotron radiation.

Distribution of species and Ga–N bonds in silicon co-implanted with gallium and nitrogen ions

D. Korolev, D. Tetelbaum, A. Mikhaylov, 2016 .

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

D. Tetelbaum, A. Mikhaylov, A. Belov, 2012 .

Mechanism of quantum dot luminescence excitation within implanted SiO2:Si:C films

D. Tetelbaum, A. Mikhaylov, A. Belov, 2012, Journal of physics. Condensed matter : an Institute of Physics journal.

Formation and “white” photoluminescence of nanoclusters in SiOx films implanted with carbon ions

D. Tetelbaum, A. Mikhaylov, A. Belov, 2010 .

Luminescence and structure of nanosized inclusions formed in SiO2 layers under double implantation of silicon and carbon ions

Y. Golan, Anna Osherov, A. Kovalev, 2009 .

Effect of carbon implantation on visible luminescence and composition of Si-implanted SiO2 layers

T. Finstad, Y. Golan, S. Foss, 2009 .

Electronic states in spherical GaN nanocrystals embedded in various dielectric matrices: The k ⋅ p-calculations

Mahesh Kumar, D. Filatov, A. Konakov, 2016 .

Effect of annealing on carrier transport properties of GaN-incorporated silicon

Mahesh Kumar, A. Mikhaylov, D. Korolev, 2016 .

Improvement of the photon generation efficiency in phosphorus-doped silicon nanocrystals: Γ–X mixing of the confined electron states

V. A. Burdov, D. Tetelbaum, A. Mikhaylov, 2009, Journal of physics. Condensed matter : an Institute of Physics journal.

Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in SiO2 and Al2O3 matrices

T. Gracheva, D. Korolev, D. Guseinov, 2012 .

Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix

D. I. Kryzhkov, A. Mikhaĭlov, A. Belov, 2012 .

Light-emitting 9R-Si phase formed by Kr+ ion implantation into SiO2/Si substrate

M. O. Marychev, A. Konakov, D. Korolev, 2018, Applied Physics Letters.

Formation of hexagonal 9R silicon polytype by ion implantation

Mahesh Kumar, N. Sobolev, D. Korolev, 2017 .

Synchrotron investigations of electronic and atomic-structure peculiarities for silicon-oxide films’ surface layers containing silicon nanocrystals

K. N. Pankov, E. Domashevskaya, D. Tetelbaum, 2011 .

XANES, USXES and XPS investigations of electron energy and atomic structure peculiarities of the silicon suboxide thin film surface layers containing Si nanocrystals

K. N. Pankov, E. Domashevskaya, D. Tetelbaum, 2010 .

Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiOx

A. P. Kasatkin, O. Gorshkov, D. Korolev, 2016, Technical Physics.

Ion beam synthesis of Si nanocrystals in silicon dioxide and sapphire matrices—the photoluminescence study

D. M. Gaponova, A. P. Kasatkin, S. Morozov, 2005 .

Properties of Al2O3: nc-Si nanostructures formed by implantation of silicon ions into sapphire and amorphous films of aluminum oxide

T. Finstad, R. Turan, S. Yerci, 2009 .

Influence of the nature of oxide matrix on the photoluminescence spectrum of ion-synthesized silicon nanostructures

D. M. Gaponova, A. P. Kasatkin, Lorenzo Pavesi, 2006 .

Phosphorus doping as an efficient way to modify the radiative interband recombination in silicon nanocrystals

V. A. Burdov, D. Tetelbaum, A. Mikhaĭlov, 2009 .

Effect of coalescence and of the character of the initial oxide on the photoluminescence of ion-synthesized Si nanocrystals in SiO2

D. M. Gaponova, A. P. Kasatkin, S. Morozov, 2005 .

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

D. Korolev, D. Guseinov, D. Tetelbaum, 2016 .

Mechanism of formation of light-emitting silicon hexagonal phase 9R-Si

A. Konakov, D. Korolev, D. Tetelbaum, 2019, Journal of Physics: Conference Series.

Yb3+ doping of nonlinear KTiOAsO4 (KTA) single crystals

L. Isaenko, A. Yelisseyev, A. Belov, 1999 .

Crystal Structure of KTP and KTA. I. Structure of the Potassium–Oxygen Nets and Differences between K+ Sites 1 and 2

L. Isaenko, A. Belov, A. Merkulov, 2001 .

Influence of ion irradiation on the morphology, structure, and optical properties of gold nanoparticles synthesized in SiO2 and Al2O3 dielectric matrices

A. I. Bobrov, D. Korolev, D. Guseinov, 2012, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.

Formation of gold nanoparticles in single-layer and multi-layer ensembles of light-emitting silicon nanocrystals using ion implantation

V. A. Burdov, D. Korolev, D. Tetelbaum, 2012 .

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation

D. Korolev, D. Tetelbaum, A. Mikhaylov, 2018, Semiconductors (Woodbury, N.Y.).

Towards an efficient light-emitting source based on self-implanted silicon with dislocation-related luminescence

D. Korolev, D. Tetelbaum, A. Mikhaylov, 2019, Journal of Physics: Conference Series.

Distribution of D1 dislocation luminescence centers in Si+-implanted silicon and the photoluminescence model

A. I. Bobrov, D. Korolev, A. Belov, 2015 .

Effect of ion doping on the dislocation-related photoluminescence in Si+-implanted silicon

A. I. Bobrov, D. Korolev, D. Tetelbaum, 2014 .

Localization of dislocation‐related luminescence centers in self‐ion implanted silicon and effect of additional boron ion doping

A. I. Bobrov, N. Sobolev, D. Korolev, 2015 .

Photoluminescence of silicon at 1235 nm produced by irradiation of SiO2/Si with Kr+ ions and subsequent high-temperature annealing

M. O. Marychev, A. Konakov, D. Korolev, 2020 .

Photoluminescent properties of the SiO2/Si system with ion-synthesized hexagonal silicon of the 9R-Si phase: Effect of post-implantation annealing

V. Trushin, P. Yunin, A. Konakov, 2023, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms.

Non-equilibrium methods for synthesis and modification of gallium oxide

V. Trushin, D. Korolev, D. Tetelbaum, 2021, Journal of Physics: Conference Series.

Ion-beam modification of metastable gallium oxide polymorphs

V. Trushin, V. Nikolaev, D. Gogova, 2021, 2103.00317.

Light-emitting hexagonal 9R-Si phase obtained by implantation of Kr+ ions in Si and SiO2/Si

M. O. Marychev, A. Konakov, D. Korolev, 2020, Journal of Physics: Conference Series.

Ion-beam synthesis of GaN in silicon

V. Sergeev, V. Trushin, A. Smirnov, 2015 .

Ion-beam simulation of radiation damage produced by fast neutrons in heterophase structures

A. N. Kachemtsev, D. Korolev, D. Guseinov, 2014 .

Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films

A. I. Bobrov, N. V. Malekhonova, D. Korolev, 2013 .

Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

A. Mikhaylov, A. Belov, A. V. Ershov, 2012, Physics of the Solid State.

Electrical Properties of Silicon-Nitride-Based Memristors on Silicon-on-Insulator Substrate

D. Korolev, A. Mikhaylov, A. Belov, 2022, Nanobiotechnology Reports.

Electrical Properties of Silicon-Oxide-Based Memristors on Silicon-on-Insulator Substrates

S. Kim, V. Vorontsov, D. Korolev, 2021, Nanobiotechnology Reports.