J. L. Wang

Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Y. En, X. B. Xu, Y. Chen, 2020, IEEE Journal of the Electron Devices Society.

Investigations on the Short-Circuit Degradation and its Mechanism of 1.2-KV 19-A SiC power MOSFETs

Y. En, X. B. Xu, Y. Chen, 2019, 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).

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Degradation Behavior and Mechanisms of E-Mode GaN HEMTs With p-GaN Gate Under Reverse Electrostatic Discharge Stress

X. B. Xu, Y. Chen, Y. Huang, 2020, IEEE Transactions on Electron Devices.

Degradation Behavior and Mechanism of SiC Power MOSFETs Under Repetitive Transmission Line Pulse Stress

C. Liu, X. B. Xu, Y. Chen, 2022, IEEE Journal of Emerging and Selected Topics in Power Electronics.