L. Tsung

A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length

J. Zhao, T. Grider, D. Mercer, 2002, Digest. International Electron Devices Meeting,.

Advanced CMOS transistors with a novel HfSiON gate dielectric

H. Bu, R. Khamankar, T. Grider, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).