C. Montgomery

A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length

J. Zhao, T. Grider, D. Mercer, 2002, Digest. International Electron Devices Meeting,.

45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process

F. Mehrad, H. Bu, L. Colombo, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..