Takashi Inoue

Low-contact-resistance and smooth-surface Ti∕Al∕Nb∕Au ohmic electrode on AlGaN∕GaN heterostructure

Yuji Ando, Masaaki Kuzuhara, Yasuhiro Okamoto, 2004 .

A parasitic resistance measurement method exploiting gate current–density characteristics in ultra-short Schottky-gate FETs

Takashi Inoue, Walter Contrata, 2008 .

Advanced RF Characterization and Delay-Time Analysis of Short Channel AlGaN/GaN Heterojunction FETs

Yuji Ando, Masaaki Kuzuhara, Yasuhiro Okamoto, 2003 .

An 8-Parameter Small-Signal Equivalent-Circuit Model for Intrinsic FETs

Keiichi Ohata, Takashi Inoue, 1997 .

60GHz dielectrically stabillized monolithic voltage controlled oscillator

Kenichi Hosoya, Kenichi Maruhashi, Masaaki Kuzuhara, 1995, 1995 25th European Microwave Conference.

A 60 GHz-band low noise HJFET amplifier module for wireless LAN applications

Mohammad Madihian, Kenichi Maruhashi, Masaaki Kuzuhara, 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

96 W AlGaN/GaN heterojunction FET with field-modulating plate

Yuji Ando, Yasuhiro Okamoto, K. Hataya, 2003 .

A Millimeter Wave Monolithic VCO with an Integrated Heterojunction FET as a Varactor

Kenichi Hosoya, Keiichi Ohata, Kenichi Maruhashi, 1994, 1994 24th European Microwave Conference.

The approach to realize the characteristics of SAW resonator with the temperature compensation and steepness for PCS duplexer

H. Nakanishi, Takashi Inoue, T. Kawasaki, 2003, IEEE Symposium on Ultrasonics, 2003.