J. Caissie

Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN

C. Q. Chen, Richard J. Molnar, M. Asif Khan, 2004 .

High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

H. L. Stormer, Richard J. Molnar, Julia W. P. Hsu, 2002 .