Zabu Kyaw

Influence of n-type versus p-type AlGaN electron-blocking layer on InGaN/GaN multiple quantum wells light-emitting diodes

Xiao Wei Sun, Wei Liu, Yun Ji, 2013 .

Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering.

Xiao Wei Sun, Wei Liu, Yun Ji, 2014, Optics letters.

Nonradiative recombination--critical in choosing quantum well number for InGaN/GaN light-emitting diodes.

Xiao Wei Sun, Wei Liu, Yun Ji, 2015, Optics express.

InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

Xiao Wei Sun, Wei Liu, Yun Ji, 2014 .

A hole modulator for InGaN/GaN light-emitting diodes

Xiao Wei Sun, Yun Ji, Hilmi Volkan Demir, 2015 .