S. P. Łepkowski

发表

Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Petr G. Eliseev, P. Perlin, Lucja Marona, 2006 .

Nonlinear elasticity in III-N compounds:Ab initiocalculations

Jacek A. Majewski, J. Majewski, S. P. Łepkowski, 2005 .

Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys

T. Suski, I. Gorczyca, N. Christensen, 2009 .

Effects of Nonlinear Elasticity and Electromechanical Coupling on Optical Properties of InGaN/GaN and AlGaN/AlN Quantum Wells

J. Majewski, S. P. Łepkowski, 2006 .

Pressure Coefficients of the Light Emission in Cubic InGaN Epilayers and Cubic InGaN/GaN Quantum Wells

H. Okumura, Y. Ishida, P. Perlin, 2002 .

Time-resolved spectroscopy of (Al, Ga, In)N based quantum wells: Localization effects and effective reduction of internal electric fields

H. Hirayama, Y. Aoyagi, P. Lefebvre, 2002 .

Unambiguous relationship between photoluminescence energy and its pressure evolution in InGaN/GaN quantum wells

M. Funato, Y. Kawakami, P. Perlin, 2012 .

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

J. Massies, N. Grandjean, P. Perlin, 2001 .

Strong electric field and nonuniformity effects in GaN∕AlN quantum dots revealed by high pressure studies

N. Grandjean, P. Perlin, T. Suski, 2006 .

Determination of built-in electric fields in quaternary InAlGaN heterostructures

H. Hirayama, Y. Aoyagi, P. Lefebvre, 2003 .

Polarization-Induced Phase Transitions in Ultra-Thin InGaN-Based Double Quantum Wells

S. P. Łepkowski, Abdur-Rehman Anwar, 2022, Nanomaterials.

Topological insulator with negative spin-orbit coupling and transition between Weyl and Dirac semimetals in InGaN-based quantum wells

W. Bardyszewski, S. P. Łepkowski, 2018, Scientific Reports.

The Role of Internal Electric Fields in III--N Quantum Structure

J. Massies, N. Grandjean, P. Perlin, 2001 .

Anomalous Rashba spin–orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells

W. Bardyszewski, S. P. Łepkowski, 2017, Journal of physics. Condensed matter : an Institute of Physics journal.

Topological insulator with negative spin-orbit coupling and transition between Weyl and Dirac semimetals in InGaN-based quantum wells

W. Bardyszewski, S. P. Łepkowski, 2018, Scientific Reports.

Recent Progress in Micro‐LED‐Based Display Technologies

Muhammad Usman, Muhammad Ali Johar, S. P. Łepkowski, 2022, Laser & Photonics Reviews.

Magnetoconductance in InN/GaN quantum wells in topological insulator phase

D. Rodak, W. Bardyszewski, S. P. Łepkowski, 2017 .

Topological phase transition and evolution of edge states in In-rich InGaN/GaN quantum wells under hydrostatic pressure

W. Bardyszewski, S. P. Łepkowski, 2017, Journal of physics. Condensed matter : an Institute of Physics journal.

Inapplicability of Martin transformation to elastic constants of zinc-blende and wurtzite group-III nitride alloys

S. P. Łepkowski, 2015 .

Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells

I. Gorczyca, N. Christensen, A. Svane, 2013 .

First-principles calculation of higher-order elastic constants using exact deformation-gradient tensors

S. P. Łepkowski, 2020 .

Pressure dependence of elastic constants in zinc-blende GaN and InN and their influence on the pressure coefficients of the light emission in cubic InGaN/GaN quantum wells

J. Majewski, S. P. Łepkowski, 2004 .

Pressure Dependence of the Light Emission in Zinc-Blende InGaAs/GaAs and InGaN/GaN Quantum Wells

I. Gorczyca, S. P. Łepkowski, 2009 .

Effect of electromechanical coupling on the pressure coefficient of light emission in group-III nitride quantum wells and superlattices

J. Majewski, S. P. Łepkowski, 2006 .

Pressure-dependent reordering of valence band states in GaN/AlxGa1−xN quantum wells

W. Bardyszewski, S. P. Łepkowski, 2012 .

Effects of nonlinear elasticity and electromechanical coupling on pressure coefficient of the light emission in group-III nitride quantum structures

S. P. Łepkowski, 2008 .

Effect of Nonlinear Elasticity on Interband and Intersubband Transition Energies in GaN/AlN Superlattices

S. P. Łepkowski, 2007 .

Significance of third-order elasticity for determination of the pressure coefficient of the light emission in strained quantum wells

S. P. Łepkowski, 2008 .

Theoretical study of the effect of nonlinear piezoelectricity on the pressure coefficient of the light emission in (111)-oriented In Ga As ∕ Ga As quantum wells

S. P. Łepkowski, 2008 .

Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells

S. Chichibu, H. Okumura, Y. Ishida, 2002 .

Effective mass and conduction band dispersion of GaAsN/GaAs quantum wells

J. Geisz, P. Perlin, T. Suski, 2002 .

Universal behavior of photoluminescence in GaN-based quantum wells under hydrostatic pressure governed by built-in electric field

P. Perlin, R. Czernecki, T. Suski, 2012 .

The electron effective mass at the bottom of the GaNAs conduction band

J. Łusakowski, C. Skierbiszewski, J. Borysiuk, 2004 .

Pressure Dependence of Exciton Binding Energy in GaN/Al_{x}Ga_{1 - x}N Quantum Wells

H. Teisseyre, W. Bardyszewski, S. P. Łepkowski, 2011 .

Small Internal Electric Fields in Quaternary InAlGaN Heterostructures

H. Hirayama, Y. Aoyagi, P. Lefebvre, 2004 .

short note: Blue Laser on High N_2 Pressure-Grown Bulk GaN

M. Boćkowski, J. Weyher, P. Perlin, 2001 .

Editorial Note:Ab initiostudy of elastic constants in InxGa1−xN and InxAl1−xN wurtzite alloys [Phys. Rev. B83, 203201 (2011)]

I. Gorczyca, S. P. Łepkowski, 2011 .

Ab initio study of elastic constants in In x Ga 1-x N and In x Al 1-x N wurtzite alloys

I. Gorczyca, S. P. Łepkowski, 2011 .

Quantum Spin Hall Effect in Two-Monolayer-Thick InN/InGaN Coupled Multiple Quantum Wells

S. P. Łepkowski, 2023, Nanomaterials.

Symmetry of the Top Valence Band States in GaN/AlGaN Quantum Wells and its Influence on the Polarization of Emitted Light

W. Bardyszewski, S. P. Łepkowski, 2011 .

Poisson Ratio and Biaxial Relaxation Coefficient in In_{x}Ga_{1-x}N and In_{x}Al_{1-x}N Alloys

I. Gorczyca, S. P. Łepkowski, 2011 .

Third-order elastic constants and biaxial relaxation coefficient in wurtzite group-III nitrides by hybrid-density functional theory calculations

S. P. Łepkowski, Abdur-Rehman Anwar, 2021, Journal of Physics: Condensed Matter.

Corrigendum: Anomalous Rashba spin–orbit interaction in electrically controlled topological insulator based on InN/GaN quantum wells (2017 J. Phys.: Condens. Matter 29 195702)

W. Bardyszewski, S. P. Łepkowski, 2020, Journal of Physics: Condensed Matter.

Elastic properties of InGaN and InAlN from first-principles calculations

I. Gorczyca, S. P. Łepkowski, 2013 .