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A high-performance directly insertable self-aligned ultra-rad-hard and enhanced isolation field-oxide technology for gigahertz silicon NMOS/CMOS VLSI

Kwok K. Ng, R. L. Field, S. J. Hillenius, 1989 .

Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process

M. Mastrapasqua, S. Moinian, T.-I. Hsu, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

Ultra-high speed CMOS circuits in thin SIMOX films

R. L. Field, George K. Celler, S. J. Hillenius, 1989, International Technical Digest on Electron Devices Meeting.