Aivars Lelis

Performance of a dual, 1200 V, 400 A, silicon-carbide power MOSFET module

Ronald Green, Damian Urciuoli, Dimeji Ibitayo, 2010, 2010 IEEE Energy Conversion Congress and Exposition.

Application of reliability test standards to SiC Power MOSFETs

Ronald Green, A. Lelis, D. Habersat, 2011, 2011 International Reliability Physics Symposium.

3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

Lin Cheng, Sei-Hyung Ryu, John Palmour, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

Electrically detected magnetic resonance study of a near interface trap in 4H SiC MOSFETs

Patrick M. Lenahan, Corey J. Cochrane, Aivars Lelis, 2011, 2011 International Semiconductor Device Research Symposium (ISDRS).

Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability

N. Goldsman, D. Habersat, R. Green, 2008, 2008 IEEE International Integrated Reliability Workshop Final Report.