B. Wood

Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability

T. Liu, N. Xu, O. Bonnin, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Epitaxial Growth of Si/Si1-xGex Films on Corrugated Substrates for Improved pMOSFET Performance

Byron Ho, T. Liu, B. Ho, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond

Man-Ping Cai, Shashank Sharma, Motoya Okazaki, 2013 .

Enhanced thermal stability of Ti/TiO2/n-Ge contacts through plasma nitridation of TiO2 interfacial layer

S. Lodha, Sayantani Ghosh, D. Biswas, 2017 .

Improvement of Si doping of In0.53Ga0.47As fin by heated implant

M. Zhang, A. Brand, X. Bao, 2015, 2015 International Symposium on VLSI Technology, Systems and Applications.

NMOS contact engineering for CMOS scaling

M. Chudzik, F. Khaja, Shashank Sharma, 2015, 2015 15th International Workshop on Junction Technology (IWJT).

Low resistivity contact on n-type Ge using low work-function Yb with a thin TiO2 interfacial layer

P. P. Manik, S. Lodha, Y. Rawal, 2016 .

Advantage of Siconi Preclean over Wet Clean for Pre Salicide Applications Beyond 65nm Node

Xinliang Lu, K. Tanaka, Jianxin Lei, 2006, 2006 IEEE International Symposium on Semiconductor Manufacturing.

Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width Dependence

T. Liu, N. Xu, O. Bonnin, 2013, IEEE Transactions on Electron Devices.

Selective Epitaxial Germanium Growth on Silicon - Trench Fill and In Situ Doping

Yi-Chiau Huang, E. Sanchez, Y. Kim, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).