P. Li

Thermal stability of SiGe dynamic threshold pMOSFET

C. Shih, W. Liao, P. Li, 2005, Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005..

Electron cyclotron resonance hydrogen and nitrogen plasma surface passivation of AlGaAs/GaAs heterojunction bipolar transistors

W.I. Wang, R. Osgood, Q. Wang, 1992, IEEE Electron Device Letters.

Photoresponses in Poly-Si Phototransistors Incorporating Germanium Quantum Dots in the Gate Dielectrics

I. Chen, P. Li, S. Tzeng, 2008, 2008 8th IEEE Conference on Nanotechnology.

Metal-insulator-metal photodetectors with Ge quantum dots formed by selective oxidation of single crystalline-Si0.85Ge0.15/Si-on-insulator

W. Liao, P. Li, S. Tzeng, 2006, 2006 International SiGe Technology and Device Meeting.

SiGe pMOSFET's with gate oxide fabricated by microwave electron cyclotron resonance plasma processing

B. Meyerson, J. Chu, E. Yang, 1994, IEEE Electron Device Letters.

Room Temperature Steady-State and Transient Carrier Transport Properties of Germanium Single Electron/Hole Transistors

P. Li, D. Kuo, W. Lai, 2006, 2006 International SiGe Technology and Device Meeting.

A Unique Approach to Generate Self-Aligned T-Gate Transistors in Counter-Doped Poly-Si With High Etching Selectivity and Isotropy

G. Huang, K. Peng, P. Li, 2020, IEEE Electron Device Letters.