S. Samanta

发表

Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si0.82Ge0.18 layers

H. D. Banerjee, S. Maikap, C. Maiti, 2001 .

Effects of nitric-oxide-plasma treatment on the electrical properties of tetraethylorthosilicate-deposited silicon dioxides on strained-Si1−xGex layers

S. Maikap, C. Maiti, L. Bera, 2000 .

Gate dielectrics on strained-Si/SiGe heterolayers

Goutam Kumar Dalapati, C. K. Maiti, Somenath Chatterjee, 2004 .

Interface properties and reliability of ultrathin oxynitride films grown on strained Si1−xGex substrates

H. D. Banerjee, S. Maikap, C. Maiti, 2003 .

Electrical properties of deposited ZrO2 films on ZnO/n-Si substrates

S. Maikap, C. Maiti, S. Chatterjee, 2003 .

Electrical properties of high-k Ta/sub 2/O/sub 5/ gate dielectrics on strained Ge-rich layers

R. A. Moore, G. Dalapati, C. Maiti, 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

High Quality Gate Dielectrics Grown by Rapid Thermal Processing Using Split-N O Technique on Strained-Si Ge Films

W. K. Choi, C. Maiti, L. Bera, 2001 .

High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si/sub 0.91/Ge/sub 0.09/ films

C. Maiti, C.S. Tan, L. Bera, 2001, IEEE Electron Device Letters.

Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si

G. Dalapati, C. Maiti, S. Chatterjee, 2004 .

Chemically Assisted Formation of Nanocrystals for Micro-electronics Application

Sungjoo Lee, W. Yoo, Zerlinda Y. L. Tan, 2006 .

Electrical characterization of low temperature deposited oxide films on ZnO/n-Si substrate

C. Maiti, S. Chatterjee, P. K. Bose, 2003 .

Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

G. Samudra, W. Yoo, Y. Wang, 2006 .

Characteristics of MIS capacitors using Ta 2 O 5 films deposited on ZnO/p-Si

S. Maikap, C. Maiti, W. Choi, 2003 .

Electrical properties of Ta2O5 films deposited on ZnO

G. Dalapati, C. Maiti, S. Chatterjee, 2003 .

Self-assembled tungsten nanocrystals in high-k dielectric for nonvolatile memory application

G. Samudra, Sungjoo Lee, N. Balasubramanian, 2005 .

TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

W. K. Choi, K. C. Seow, E. Fitzgerald, 2006 .

Effect of the stack layer on the electrical properties of Ta2O5 gate dielectrics deposited on strained-Si0.82Ge0.18 substrates

H. D. Banerjee, C. Maiti, S. Chatterjee, 2002 .

Enhancement of memory window in short channel non-volatile memory devices using double layer tungsten nanocrystals

Y. Yeo, G. Samudra, N. Balasubramanian, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si1?xGex

C. Maiti, L. Bera, S. Samanta, 2002 .

Performance improvement of flash memory using AlN as charge-trapping Layer

S. S. Mahato, C. K. Maiti, C. Mahata, 2009 .

High-k ZrO2 gate dielectric on strained-Si

C. Maiti, T. Perova, H. Gamble, 2003 .

Rapid thermal oxidation of Ge-rich strained layers

R. A. Moore, G. Dalapati, C. Maiti, 2004, 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716).

Investigations on Ta/sub 2/O/sub 5//ZnO insulator-semiconductor interfaces

S. Maikap, C. Maiti, D. Y. Kim, 2002 .

Tungsten nanocrystals embedded in high-k materials for memory application

G. Samudra, N. Balasubramanian, L. Bera, 2005 .

Charge trapping characteristics of ultrathin oxynitrides on Si/Si1-x-yGexCy/Si heterolayers

S. Banerjee, S. Maikap, C. Maiti, 2001 .

Minority carrier lifetime and diffusion length in Si1−x−yGexCy heterolayers

S. Maikap, C. Maiti, S. Chatterjee, 2003 .

Minority carrier lifetime and diffusion length in Si1-x-yGexCy and Si1-yCy heterolayers

G. Dalapati, C. Maiti, S. Samanta, 2004 .

Structural and Optoelectronic Properties of Nanocrystalline CdTe Thin Films Synthesized by Using SILAR Technique

S. R. Gosavi, S. Samanta, D. Salunke, 2017 .

Rapid thermal oxidation of Ge-rich Si1−xGex heterolayers

G. Dalapati, C. Maiti, S. Chattopadhyay, 2006 .

Reliability of ultrathin (<2 nm) oxides on strained SiGe heterolayers

C. K. Maiti, H. D. Banerjee, L. K. Bera, 2003 .

Study of interfaces in organic semiconductor heterojunctions

D. K. Aswal, S. Sharma, S. Samanta, 2011 .

Electrical properties of stacked gate dielectric (SiO2/ZrO2) deposited on strained SiGe layers

H. D. Banerjee, C. Maiti, S. Chatterjee, 2002 .

Self-assembly of Ni nanocrystals on HfO2 and N-assisted Ni confinement for nonvolatile memory application

Won Jong Yoo, Sungjoo Lee, Sungjoo Lee, 2005 .

Surface roughness and interface engineering for gate dielectrics on strained layers

C. Maiti, S. Chattopadhyay, M. Bera, 2006 .

Electrical properties of ultrathin TiO2 films on Si1−yCy heterolayers

G. Dalapati, C. Maiti, S. Chatterjee, 2003 .