C. Stanis

发表

Graded SiGe-Channel Modulation-Doped p-Mosfets

J.M.C. Stork, S. Verdonckt-Vandebroek, D. Harame, 1991, 1991 Symposium on VLSI Technology.

Novel Bipolar Transistor Isolation Structure Using Combined Selective Epitaxial Growth and Planarization Technique

J.M.C. Stork, R.C. McIntosh, M. Gilbert, 1992, ESSDERC '92: 22nd European Solid State Device Research conference.

Vapor HF Etching for Low Temperature Silicon Epitaxy

Susan L. Cohen, R. Baseman, L. Rothman, 1992 .

Spatially Confined Chemistry: Fabrication of Ge Quantum Dot Arrays

J. Heath, S. Wind, J. Bucchignano, 1996 .

The stability of Si_1−xGe_x strained layers on small-area trench-isolated silicon

K. Schonenberg, D. Harame, L. Gignac, 1997 .

The High Temperature Stability and Relaxation of UHV/CVD SiGe Thin Films

Kevin K. H. Chan, S. Stiffler, M. Goorsky, 1992 .

Ion-implanted base SiGe PNP self-aligned SEEW transistors

D. Harame, J. Comfort, E. Crabbé, 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.

The role of dislocation‐dislocation interactions in the relaxation of pseudomorphically strained semiconductors. II. Experiment−The high‐temperature relaxation of ultrahigh‐vacuum chemical‐vapor‐deposited SiGe thin films

Kevin K. H. Chan, S. Stiffler, M. Goorsky, 1992 .

The role of dislocation‐dislocation interactions in the relaxation of pseudomorphically strained semiconductors. I. Theory

Kevin K. H. Chan, S. Stiffler, M. Goorsky, 1992 .

Diffusion of elements implanted in amorphous titanium disilicide

F. d'Heurle, J. Cotte, Patrick Gas, 1993 .

Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors

Joachim N. Burghartz, James D. Warnock, Jack Y.-C. Sun, 1992 .

NH 4 F Pre-Cleaning of Silicon (100) for UHV-CVD Epitaxy

Susan L. Cohen, C. D'Emic, F. Cardone, 1992 .

Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology

Bernard S. Meyerson, Joachim N. Burghartz, Johannes M. C. Stork, 1991 .

High-mobility modulation-doped SiGe-channel p-MOSFETs

D. Harame, E. Crabbé, J. Stork, 1991, IEEE Electron Device Letters.

SiGe-base PNP transistors fabricated with n-type UHV/CVD LTE in a `No Dt' process

G.L. Patton, B.S. Meyerson, E.F. Crabbe, 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.

113-GHz fT graded-base SiGe HBTs

Bernard S. Meyerson, David L. Harame, A. C. Megdanis, 1993, 51st Annual Device Research Conference.

Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology

J.M.C. Stork, K.-Y. Toh, C. Stanis, 1990, International Technical Digest on Electron Devices.

113-GHz f/sub T/ graded-base SiGe HBT's

Bernard S. Meyerson, David L. Harame, A. C. Megdanis, 1993 .

The thermal stability of SiGe films deposited by ultrahigh-vacuum chemical vapor deposition

Bernard S. Meyerson, David L. Harame, Scott Richard Stiffler, 1991 .

Electromigration Drift Velocity in Al‐Alloy and Cu‐Alloy Lines

C-K. Hu, C. Stanis, K. L. Lee, 1996 .

Electron microscopy of the grain structure of metal films and lines

D. A. Smith, M. Small, C. Stanis, 1993 .

Erratum: The thermal stability of SiGe films deposited by ultrahigh vacuum chemical vapor deposition [J. Appl. Phys. 70, 1416 (1991)]

D. Harame, J. Comfort, B. Meyerson, 1991 .

Electromigration Damage in Fine Al Alloy Lines due To Interfacial Diffusion

P. Ho, N. Mazzeo, M. Small, 1993 .

Microstructure Evolution in Metal Interconnects

M. Small, T. Kwok, C. Stanis, 1992 .