Torsten Wendav

Enhancement of Ge-based p-channel vertical FET performance by channel engineering using planar doping and a Ge/SixGe1–x–ySny heterostructure model for low power FET applications

J. Schulze, I. Fischer, Y. Elogail, 2018, Semiconductor Science and Technology.

Modeling of SiGeSn-based semiconductor heterostructures for optoelectronic applications

Torsten Wendav, 2017 .

Growth and characterization of SiGeSn quantum well photodiodes.

G. Capellini, K. Busch, J. Schulze, 2015, Optics Express.

Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells

Michael R. S. Huang, G. Capellini, K. Busch, 2020 .

Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling

G. Capellini, K. Busch, J. Schulze, 2016 .

Electroluminescence of GeSn/Ge MQW LEDs on Si substrate.

Jörg Schulze, Martin Kittler, Bernhard Schwartz, 2015, Optics letters.

Compositional dependence of the band-gap of Ge1−x−ySixSny alloys

G. Capellini, K. Busch, M. Oehme, 2016 .

Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges

Kurt Busch, Jörg Schulze, Inga A. Fischer, 2017, 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO).