H. Murakami

发表

Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods

S. K. Sahari, S. Higashi, S. Miyazaki, 2013 .

Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis

K. Makihara, M. Ikeda, S. Miyazaki, 2017 .

X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide

S. Higashi, S. Miyazaki, H. Murakami, 2011 .

Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current

T. Ono, Hideki Murakami, Seiichi Miyazaki, 2001 .

Fundamental limit of gate oxide thickness scaling in advanced MOSFETs

Hideki Murakami, Seiichi Miyazaki, Masataka Hirose, 2000 .

Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/ Kelvin Probe Technique

K. Makihara, M. Ikeda, S. Higashi, 2007 .

Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation

S. Higashi, S. Miyazaki, K. Sakaike, 2007 .

Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication

S. Hayashi, S. Higashi, S. Miyazaki, 2011 .

A new crystallization technique of Si films on glass substrate using thermal plasma jet

S. Higashi, S. Miyazaki, H. Murakami, 2005 .

Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor

T. Sameshima, S. Higashi, S. Miyazaki, 2004 .

MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs

S. Kamiyama, I. Akasaki, T. Takeuchi, 2020 .

Characterizations of GaN nanowires and GaInN/GaN multi-quantum shells grown by MOVPE

S. Kamiyama, I. Akasaki, T. Ohkubo, 2019, Japanese Journal of Applied Physics.

Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition

S. Kamiyama, I. Akasaki, T. Takeuchi, 2019, physica status solidi (a).

Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface

M. Ogasawara, S. Miyazaki, M. Hirose, 2000 .

Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopy

S. Higashi, S. Miyazaki, H. Murakami, 2011 .

Electronic structure and energy band offsets for ultrathin silicon nitride on Si(1 0 0)

S. Miyazaki, H. Murakami, M. Narasaki, 2003 .

Fundamental limit of gate oxide thickness scaling in advanced MOSFETs

W. Mizubayashi, K. Shibahara, S. Miyazaki, 2000 .

Evaluation of Gap States in Hydrogen-Terminated Silicon Surfaces and Ultrathin SiO 2 /Si Interfaces by using Photoelectron Yield Spectroscopy

S. Miyazaki, A. Kohno, M. Hirose, 1997 .

Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium–Yttrium Mixed Oxide

S. Higashi, S. Miyazaki, Y. Goto, 2011 .

The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics

S. Higashi, S. Miyazaki, Y. Goto, 2011 .

Properties of Al Ohmic Contacts to n-type 4H-SiC Employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer

S. Hayashi, S. Higashi, H. Hanafusa, 2014 .

Native Oxidation Growth on Ge(111) and (100) Surfaces

S. K. Sahari, K. Makihara, S. Higashi, 2011 .

Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System

S. Higashi, S. Miyazaki, H. Murakami, 2013 .

Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes

S. Higashi, S. Miyazaki, Y. Goto, 2012 .

Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidation

H. Nakagawa, S. Higashi, S. Miyazaki, 2006 .

Ultrathin gate dielectrics for silicon nanodevices

Khairurrijal, W. Mizubayashi, K. Shibahara, 2000 .

Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories

M. Ikeda, S. Miyazaki, A. Kohno, 2000 .

Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

S. Higashi, S. Miyazaki, Y. Goto, 2011, 2011 International Meeting for Future of Electron Devices.

Synthesis and optical properties of disiloxane-linked decathiophene and dodecathiophene polymers

J. Ohshita, H. Murakami, T. Haino, 2021, Polymer Journal.

Self-assembling formation of silicon quantum dots with a germanium core by low-pressure chemical vapour deposition

S. Miyazaki, Y. Darma, H. Murakami, 2003 .

Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core

S. Miyazaki, Y. Darma, H. Murakami, 2004 .

Progress in determination method for ultrathin Si-based oxide bandgaps from analysis of energy loss signals for photoelectrons

K. Makihara, S. Miyazaki, H. Murakami, 2015 .

Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities

Seiichiro Higashi, Seiichi Miyazaki, Akio Ohta, 2011, IEICE Trans. Electron..

Kinetics of thermally oxidation of Ge(100) surface

S. K. Sahari, S. Higashi, K. Mishima, 2013 .

Growth of GaN and AlGaN for UV/blue p-n junction diodes

Isamu Akasaki, Katsuhide Manabe, Hisaki Kato, 1993 .

Crystallization of Si films on glass substrate using thermal plasma jet

S. Higashi, S. Miyazaki, H. Murakami, 2005 .

Growth of crystallized Ge films from VHF inductively-coupled plasma of H2-diluted GeH4

K. Makihara, S. Higashi, S. Miyazaki, 2007 .

Diffusion and incorporation of Zr into thermally grown SiO2 on Si(1 0 0)

S. Miyazaki, H. Murakami, Masanori Yamaoka, 2003 .

Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation

S. Higashi, S. Miyazaki, Kazuya Matsumoto, 2010 .

Millisecond Rapid Thermal Annealing of Si Wafer Induced by High-Power-Density Thermal Plasma Jet Irradiation and Its Application to Ultrashallow Junction Formation

S. Higashi, S. Miyazaki, T. Okada, 2009 .

In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation

S. Higashi, S. Miyazaki, T. Okada, 2008 .

In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing

S. Higashi, S. Miyazaki, T. Okada, 2008 .

Crystallization of amorphous Ge films induced by semiconductor diode laser annealing

K. Sakaike, S. Higashi, S. Miyazaki, 2008 .

Influence of substrate dc bias on crystallinity of silicon films grown at a high rate from inductively-coupled plasma CVD

S. Higashi, S. Miyazaki, H. Murakami, 2005 .

White-light-emitting edge-functionalized graphene quantum dots.

H. Murakami, T. Haino, R. Sekiya, 2014, Angewandte Chemie.

Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation

Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, 2006 .

Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-Based Electrodes

K. Makihara, S. Higashi, S. Miyazaki, 2013 .

Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior

Seiichiro Higashi, Seiichi Miyazaki, Mitsuhisa Ikeda, 2013, IEICE Trans. Electron..

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

Seiichiro Higashi, Seiichi Miyazaki, Akio Ohta, 2012, IEICE Trans. Electron..

Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure

Seiichiro Higashi, Seiichi Miyazaki, Katsunori Makihara, 2011, IEICE Trans. Electron..

Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique

A. Masuda, M. Kondo, S. Higashi, 2008 .

Formation of Nanometer Silicon Dots with Germanium Core by Highly-Selective Low-Pressure Chemical Vapor Deposition

S. Miyazaki, Y. Darma, H. Murakami, 2002, 2002 International Microprocesses and Nanotechnology Conference, 2002. Digest of Papers..

Hybrid simulation of light extraction efficiency in multi-quantum-shell (MQS) NW (nanowire) LED with a current diffusion layer

S. Kamiyama, I. Akasaki, T. Takeuchi, 2019, Japanese Journal of Applied Physics.

High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer

S. Hayashi, S. Higashi, H. Hanafusa, 2015 .

Memory Operation of Silicon Quantum-Dot Floating-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Hideki Murakami, Seiichi Miyazaki, Mitsuhisa Ikeda, 2001 .

Characterization of interfacial reaction and chemical bonding features of LaOx/HfO2 stack structure formed on thermally-grown SiO2/Si(100)

S. Higashi, S. Miyazaki, H. Murakami, 2009 .

Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots

K. Makihara, H. Deki, S. Higashi, 2007 .

Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories

M. Ikeda, S. Miyazaki, H. Murakami, 2003 .

Characterization of chemical bonding features and defect state density in HfSiOx Ny /SiO2 gate stack

S. Inumiya, K. Makihara, S. Higashi, 2007 .

Verification of Theoretical Model for Tunneling Currents in Al/SiO2/p-Si MOS Capacitors with Nanometer-Thick Oxides

K. Khairurrijal, B. Mulyanti, H. Murakami, 2015 .

Characterization of Interfaces between Chemically Cleaned or Thermally Oxidized Germanium and Metals

S. Higashi, S. Miyazaki, H. Murakami, 2010 .

Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication

S. Hayashi, S. Higashi, S. Miyazaki, 2010 .

White-light-emitting edge-functionalized graphene quantum dots.

H. Murakami, T. Haino, R. Sekiya, 2014, Angewandte Chemie.

Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jet

S. Higashi, S. Miyazaki, T. Okada, 2008 .