S. Whang

发表

Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH/sub 3/ and thin AlN) and TaN/HfO/sub 2/ gate stack

Fei Gao, Fei Gao, D. Kwong, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

S. Balakumar, Fei Gao, D. Kwong, 2006, 2006 International Electron Devices Meeting.

Synthesis of Nickel Mono-Silicide Nanowire by Chemical Vapor Deposition on Nickel Film: Role of Surface Nickel Oxides

Sungjoo Lee, Weifeng Yang, Zhiyuan Sun, 2009 .

High Quality Single Crystal Al-catalyzed Si Nanowire

D. Kwong, Sungjoo Lee, B. Cho, 2007 .

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Albert Chin, D.S.H. Chan, Narayanan Balasubramanian, 2004 .

Instructions for Preparing Camera-Ready Summaries for SSDM 2004

S. Whang, Z. Sun, W. F. Yang, 2008 .

Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode

D.S.H. Chan, A. Chin, D. Kwong, 2004, IEEE Electron Device Letters.

Complementary Metal-Oxide-Semiconductor Compatible Al-Catalyzed Silicon Nanowires Growth and the Effects of Surface Oxidation of Al Seeding Layer

D. Kwong, B. Cho, Weifeng Yang, 2007 .

Thermally robust high quality HfN/HfO/sub 2/ gate stack for advanced CMOS devices

D.S.H. Chan, J.F. Kang, J.D. Chen, 2003, IEEE International Electron Devices Meeting 2003.

Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition

S. Park, J. Ha, K. Fujii, 2010 .

Study on the synthesis of high quality single crystalline Si1−xGex nanowire and its transport properties

D. Kwong, Sungjoo Lee, B. Cho, 2007 .

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

D. Kwong, Ming-Fu Li, Sungjoo Lee, 2004 .