J. Höntschel

Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET

Manfred Horstmann, Ralf Illgen, Tom Herrmann, 2010, IEEE Transactions on Electron Devices.

Simulation of Quantum Transport in Monolithic ICs Based on In Ga As-In Al As RTDs and HEMTs With a Quantum Hydrodynamic Transport Model

J. Höntschel, W. Klix, R. Stenzel, 2004 .

Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies

T. Herrmann, M. Horstmann, S. Flachowsky, 2010 .

Characterization of nanotransistors in a semiempirical model

H. Richter, U. Wulf, J. Kučera, 2016 .

A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

M. Trentzsch, H. Mulaosmanovic, S. Slesazeck, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).