I. Jyothi

发表

Current–voltage and capacitance–voltage characteristics of Al Schottky contacts to strained Si-on-insulator in the wide temperature range

Chel-Jong Choi, H. Hong, V. Janardhanam, 2015 .

Electrical Properties and Carrier Transport Mechanism of Au/n-GaN Schottky Contact Modified Using a Copper Pthalocyanine (CuPc) Interlayer

V. R. Reddy, Chel-Jong Choi, Jae-Yeon Kim, 2014 .

Modified electrical characteristics of Pt/n-type Ge Schottky diode with a pyronine-B interlayer

V. R. Reddy, Chel-Jong Choi, V. Janardhanam, 2014 .

Energy-level alignment and electrical properties of Al/p-type Si Schottky diodes with sorbitol-doped PEDOT:PSS as an organic interlayer

V. R. Reddy, Chel-Jong Choi, Jouhahn Lee, 2015 .

Effect of copper phthalocyanine thickness on surface morphology, optical and electrical properties of Au/CuPc/n-Si heterojunction

V. R. Reddy, Chel-Jong Choi, C. S. Harsha, 2018 .

Temperature-dependent current–voltage characteristics of Se Schottky contact to n-type Ge

Chel-Jong Choi, Kwang-soon Ahn, V. Janardhanam, 2013 .

Double Gaussian Distribution of Inhomogeneous Barrier Height in Ru/Pt/n‐GaN Schottky Barrier Diodes

V. R. Reddy, I. Jyothi, N. Reddy, 2011 .

Electrical, structural and morphological characteristics of rapidly annealed Ni/Pd Schottky rectifiers on n‐type GaN

Chel-Jong Choi, I. Jyothi, M. Siva Pratap Reddy, 2011 .

Temperature-dependent interface barrier behavior in MoS2/n-GaN 2D/3D heterojunction

Chel-Jong Choi, V. Janardhanam, I. Jyothi, 2021 .

High gain GaN ultraviolet Schottky photodetector with Al-doped ZnO interlayer

Chel-Jong Choi, V. Janardhanam, K. Shim, 2021, Surfaces and Interfaces.

Electrical, structural and surface morphological properties of thermally stable low-resistance W/Ti/Au multilayer ohmic contacts to n-type GaN

V. R. Reddy, I. Jyothi, 2010 .

Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

V. Rajagopal Reddy, P. R. Sekhar Reddy, Vallivedu Janardhanam, 2016 .

Schottky Barrier Parameters and Interfacial Reactions of Rapidly Annealed Au/Cu Bilayer Metal Scheme on N-type InP

V. R. Reddy, Chel-Jong Choi, I. Jyothi, 2012 .

Rectifying and breakdown voltage enhancement of Au/n-GaN Schottky diode with Al-doped ZnO films and its structural characterization

V. R. Reddy, Chel-Jong Choi, V. Janardhanam, 2019, Thin Solid Films.

Microstructural and electrical properties of Cu-germanide formed on p-type Ge wafer

Chel-Jong Choi, J. Hwang, H. Kang, 2016 .

Electrical properties of a Cu-germanide Schottky contact to n-type Ge depending on its microstructural evolution driven by rapid thermal annealing

Chel-Jong Choi, H. Yun, V. Janardhanam, 2017 .

A STUDY ON PLACENTAL MORPHOLOGY IN GESTATIONAL DIABETES

I. Jyothi, Katadi Venkata Sudha Madhuri, 2017 .

Modification of Schottky barrier properties of Al/p-type Si Schottky rectifiers with graphene-oxide-doped poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) interlayer

V. R. Reddy, Chel-Jong Choi, H. Yun, 2017 .

Fermi‐level depinning in germanium Schottky junction using nitrogen plasma treatment

H. Yun, V. Janardhanam, Sungnam Lee, 2018, Electronics Letters.

Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si-on-Insulator

Chel-Jong Choi, H. Hong, V. Janardhanam, 2013 .

Electrical transport properties of Ru/Cu/n-InP Schottky barrier diode based on temperature-dependent I–V and C–V measurements

I. Jyothi, V. Rajagopal Reddy, V. Lakshmi Devi, 2012 .

Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP

V. R. Reddy, I. Jyothi, V. Devi, 2012 .

Influence of annealing on structural and electrical properties of double metal structure Ru/Cu contacts on n‐type InP

V. R. Reddy, Chel-Jong Choi, I. Jyothi, 2012 .

Structural and electrical properties of rapidly annealed Ni/Mo Schottky barriers on n‐type GaN

V. R. Reddy, Chel-Jong Choi, J. Bae, 2010 .

Self-Powered Mos2/N-Type Gan Heterojunction Photodetector with Broad Spectral Response in Ultraviolet–Visible–Near-Infrared Range

Chel-Jong Choi, V. Janardhanam, K. Shim, 2023, SSRN Electronic Journal.

Carrier conduction mechanisms of WSe2/p-type Ge epilayer heterojunction depending on the measurement temperature and applied bias

Chel-Jong Choi, H. Yun, Woong-Ki Hong, 2020 .

Effect of copper phthalocyanine (CuPc) interlayer on the electrical characteristics of Au/n-GaN Schottky rectifier

Chel-Jong Choi, Kwang-soon Ahn, Y. Lim, 2015 .

Temperature-dependent current–voltage characteristics of Er-silicide Schottky contacts to strained Si-on-insulator

Chel-Jong Choi, Kwang-soon Ahn, M. Seo, 2013 .

Effect of oxygen plasma treatment on the electrical characteristics of Pt/n-type Si Schottky diodes

Chel-Jong Choi, V. Janardhanam, Sungnam Lee, 2016 .