Y. Miyamura

发表

SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge-Condensation Technique for High-Mobility Channel CMOS Devices

T. Numata, N. Sugiyama, S. Takagi, 2004 .

Thermal stress induced dislocation distribution in directional solidification of Si for PV application

T. Sekiguchi, K. Kakimoto, H. Harada, 2014 .

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

A. Ogura, K. Kakimoto, H. Harada, 2018, Japanese Journal of Applied Physics.

Silicon bulk growth for solar cells: Science and technology

K. Kakimoto, S. Nakano, H. Harada, 2017 .

Evaluation of Silicon Substrates Fabricated by Seeding Cast Technique

T. Sekiguchi, A. Ogura, Y. Ohshita, 2012 .

Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds

T. Sekiguchi, Jun Chen, H. Harada, 2015 .

Characterization of SiGe Layer on Insulator by In-Plane Diffraction Method

D. Murata, A. Ogi, Y. Miyamura, 2005 .

Gettering of Cu and Ni Impurities in SIMOX Wafers

Y. Miyamura, J. Jabłoński, H. Tsuya, 1995 .

Relationship between Dislocation Density and Oxygen Concentration in Silicon Crystals during Directional Solidification

K. Kakimoto, S. Nakano, H. Harada, 2018, Crystals.

Effect of oxygen on dislocation multiplication in silicon crystals

K. Kakimoto, S. Nakano, H. Harada, 2017 .

Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells

T. Sekiguchi, A. Ogura, Jun Chen, 2013 .

Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?

K. Kakimoto, S. Nakano, H. Harada, 2018 .

Advantage in solar cell efficiency of high-quality seed cast mono Si ingot

T. Sekiguchi, A. Ogura, Y. Ohshita, 2015 .

Oxygen Concentration in the Top Silicon Layer of Silicon-on-Insulator Materials Formed by Low-Dose Implantation of Oxygen

Y. Miyamura, J. Jabłoński, M. Saito, 1996 .

Impact of Light-Element Impurities on Crystalline Defect Generation in Silicon Wafer

T. Sekiguchi, A. Ogura, Y. Ohshita, 2012 .

Lattice relaxation and dislocation generation/annihilation in SiGe-on-insulator layers during Ge condensation process

N. Sugiyama, S. Takagi, T. Tezuka, 2006 .

Evaluation of defects generation in crystalline silicon ingot grown by cast technique with seed crystal for solar cells.

Takashi Sekiguchi, Takuto Kojima, Atsushi Ogura, 2012, Journal of applied physics.

Dislocation behavior in seed‐cast grown Si ingots based on crystallographic orientation

T. Sekiguchi, K. Kakimoto, H. Harada, 2016 .

Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization

T. Sekiguchi, Jun Chen, K. Kakimoto, 2014 .

Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process

Y. Kangawa, K. Kakimoto, S. Nakano, 2013 .

Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal

T. Sekiguchi, Jun Chen, K. Kakimoto, 2014 .

10 cm Diameter Mono Cast Si Growth and its Characterization

T. Sekiguchi, A. Ogura, Jun Chen, 2013 .

Effect of Cooling Rate on the Activation of Slip Systems in Seed Cast-Grown Monocrystalline Silicon in the [001] and [111] Directions

K. Kakimoto, S. Nakano, H. Harada, 2013 .

Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

K. Kakimoto, S. Nakano, H. Harada, 2017 .

3D numerical study of the asymmetric phenomenon in 200 mm floating zone silicon crystal growth

K. Kakimoto, S. Nakano, H. Harada, 2020 .

Transient global modeling for the pulling process of Czochralski silicon crystal growth. II. Investigation on segregation of oxygen and carbon

K. Kakimoto, S. Nakano, H. Harada, 2020 .

Anisotropic Thermal Stress Simulation with Complex Crystal–Melt Interface Evolution for Seeded Growth of Monocrystalline Silicon

T. Sekiguchi, K. Kakimoto, S. Nakano, 2012 .

Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace

T. Sekiguchi, K. Kakimoto, S. Nakano, 2012 .

Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells

T. Sekiguchi, K. Kakimoto, S. Nakano, 2017 .

Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells

T. Sekiguchi, K. Kakimoto, S. Nakano, 2015 .

50 cm Size Seed Cast Si Ingot Growth and its Characterization

T. Sekiguchi, Jun Chen, K. Kakimoto, 2015 .

Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots

T. Sekiguchi, Jun Chen, Y. Miyamura, 2014 .

Characterization of Residual Strain in Si Ingots Grown by the Seed-Cast Method

Masayuki Fukuzawa, Takashi Sekiguchi, Koichi Kakimoto, 2013 .

Dislocation analysis of a new method for growing large-size crystals of monocrystalline silicon using a seed casting technique

T. Sekiguchi, K. Kakimoto, S. Nakano, 2012 .

Evaluation of residual strain in directional solidified mono‐Si ingots

T. Sekiguchi, K. Kakimoto, H. Harada, 2013 .

Effect of Crystallinity on Residual Strain Distribution in Cast-Grown Si

T. Sekiguchi, H. Harada, M. Fukuzawa, 2013 .

Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

K. Kakimoto, S. Nakano, H. Harada, 2018 .

Structural Study of Small Angle Grain Boundaries in Multicrystalline Si

T. Sekiguchi, Jun Chen, S. Ito, 2012 .

Control of extended defects in cast multicrystalline silicon using polycrystalline template

T. Sekiguchi, Jun Chen, H. Harada, 2015 .

Transient global modeling for the pulling process of Czochralski silicon crystal growth. I. Principles, formulation, and implementation of the model

K. Kakimoto, S. Nakano, H. Harada, 2020 .

Performance enhancement of partially- and fully-depleted strained-SOI MOSFETs and characterization of strained-Si device parameters

T. Tezuka, J. Koga, N. Hirashita, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

3D Numerical Analysis of the Asymmetric Three-Phase Line of Floating Zone for Silicon Crystal Growth

K. Kakimoto, S. Nakano, H. Harada, 2020, Crystals.

3D Global Heat Transfer Model on Floating Zone for Silicon Single Crystal Growth

K. Kakimoto, S. Nakano, H. Harada, 2018 .

3D numerical simulation of free surface shape during the crystal growth of floating zone (FZ) silicon

K. Kakimoto, S. Nakano, H. Harada, 2018 .

Analytical Model for Epitaxial Growth of SiGe from SiH4 and GeH4 in Reduced-Pressure Chemical Vapor Deposition

D. Murata, Y. Miyamura, M. Imai, 2008 .

Analysis of Inhomogeneous Dislocation Distribution in Multicrystalline Si

T. Sekiguchi, A. Ogura, Jun Chen, 2013 .

Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers

Katsutoshi Izumi, Masato Imai, Sadao Nakashima, 1996 .