N. Defrance

InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz

M. Heuken, A. Vescan, H. Behmenburg, 2011, IEEE Electron Device Letters.

AlGaN/GaN HEMT High Power Densities on $\hbox{SiC/} \hbox{SiO}_{2}$/poly-SiC Substrates

C. Gaquiere, Y. Douvry, J.C. De Jaeger, 2009, IEEE Electron Device Letters.

Fabrication, Characterization, and Physical Analysis of AlGaN/GaN HEMTs on Flexible Substrates

Y. Douvry, M. Lesecq, Y. Cordier, 2013, IEEE Transactions on Electron Devices.

AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz $F_{ \rm MAX}$

H. Maher, P. Frijlink, S. Bouzid-Driad, 2013, IEEE Electron Device Letters.

Memristor device characterization by scanning microwave microscopy

K. Haddadi, D. Theron, F. Alibart, 2017, 2017 International Conference on Manipulation, Automation and Robotics at Small Scales (MARSS).