Jong-Mun Park

Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approach

Karl Rupp, Tibor Grasser, Prateek Sharma, 2015, 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).

A model for hot-carrier degradation in nLDMOS transistors based on the exact solution of the Boltzmann transport equation versus the drift-diffusion scheme

T. Grasser, H. Enichlmair, S. Tyaginov, 2015, EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon.

A method for generating structurally aligned high quality grids and its application to the simulation of a trench gate MOSFET

S. Selberherr, C. Heitzinger, A. Sheikholeslami, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs

I. Starkov, T. Grasser, C. Jungemann, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.

Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Karl Rupp, Tibor Grasser, Prateek Sharma, 2015, IEEE Transactions on Electron Devices.

Impact of the carrier distribution function on hot-carrier degradation modeling

Tibor Grasser, Christoph Jungemann, Ivan Starkov, 2011, 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

Tibor Grasser, Christoph Jungemann, Oliver Triebl, 2011, 2011 International Conference on Simulation of Semiconductor Processes and Devices.