C. Steen

发表

Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection X-ray fluorescence spectrometry and successive etching of silicon

P. Pichler, H. Ryssel, C. Steen, 2007 .

Interplay of disorder and tunneling in coupled quantum well structures – tuning the intersubband line shape by an electric field

G. Döhler, C. Steen, M. Hofmann, 2000 .

Investigation of deep electronic centers in low-temperature grown GaAs using extremely thin layers

S. Malzer, P. Kiesel, G. Döhler, 2000 .

Absorption of in-plane polarized light in quasi-2D systems enabled by strong potential fluctuations

G. Döhler, C. Steen, M. Hofmann, 2000 .

Optical and electrical spectroscopy of defects in low temperature grown GaAs

S. Soubatch, S. Malzer, P. Kiesel, 2002 .

Observation of THz Oscillations and Efficient THz Emission from Contacted Low Temperature Grown GaAs Structures

P. Kiesel, S. Dankowski, S. Tautz, 2000 .

Distribution and segregation of arsenic at the SiO2/Si interface

Heiner Ryssel, Peter Pichler, Wolfgang Windl, 2008 .

Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation

P. Pichler, W. Lerch, C. Steen, 2007 .

Characterization of the pile-up of As at the SiO2/Si interface

H. Ryssel, G. Duscher, P. Pichler, 2007, European Solid-State Device Research Conference.

Characterization of the Segregation of Arsenic at the Interface SiO 2 /Si

J. Berg, G. Duscher, P. Pichler, 2007 .

Segregation of antimony to Si/SiO2 interfaces

P. Pichler, H. Ryssel, C. Steen, 2008 .

Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes

P. Pichler, A. Burenkov, C. Steen, 2008 .