K. Aubuchon

Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator

K. Aubuchon, Kenneth G. Aubuchon, 1971 .

MOS field effect transistors formed by gate masked ion implantation

H. G. Dill, K. G. Aubuchon, Robert W. Bower, 1968 .

Radiation Effects in Modified Oxide Insulators in MOS Structures

K. Aubuchon, H. Dill, C. Perkins, 1968 .

Characterization of MOSFETs formed by gate masked ion implantation technique

S. A. Thompson, R. Bower, K. Aubuchon, 1968 .

Radiation Hardened CMOS/SOS

E. Harari, K. Aubuchon, 1975, IEEE Transactions on Nuclear Science.