W. Kuhn

发表

A new hydrodynamic principle for CVD reactors: the boundary condition control

W. Kuhn, 1996 .

Incorporation and Interaction of Hydrogen with Acceptor Impurities in II-VI Semiconductor Compounds

D. Ballutaud, D. Côte, B. Clerjaud, 1993 .

Optical assessment of reactive ion etched ZnTe and ZnSe for nanostructures

C. Wilkinson, M. Foad, C. Torres, 1992 .

Spectroscopic investigations of donor and acceptor states in n- and p-doped ZnTe epilayers

S. Lankes, P. Link, W. Kuhn, 1992 .

Low temperature MOVPE growth of ZnSe with ditertiarybutylselenide

W. Richter, U. W. Pohl, A. Krost, 1992 .

Photoassisted metalorganic vapor-phase epitaxy of ZnSe on GaAs

J. Bourée, O. Gorochov, W. Kuhn, 1995 .

Photoassisted metal organic vapour-phase epitaxy of ZnTe on GaAs

H. Dumont, J. Bourée, O. Gorochov, 1994 .

Analysis of the CVD in a horizontal reactor. I. The epitaxy of Ge

R. Triboulet, W. Kuhn, D. Angermeier, 1998 .

Investigation of the hydrostatic pressure dependence of the E0 gap, the excitonic binding energy and the refractive index of MOCVD-grown ZnTe layers

P. Link, W. Kuhn, H. Wagner, 1992 .

Growth and doping of ZnTe and ZnSe epilayers with metalorganic vapour phase epitaxy

A. Naumov, W. Kuhn, H. Wagner, 1994 .

Luminescence caused by extended lattice defects in epitaxially grown ZnTe layers

A. Naumov, T. Reisinger, W. Kuhn, 1994 .

Misfit dislocations in epitaxial ZnTe/GaAs (001) studied by HRTEM

A. Rosenauer, J. Zweck, P. Link, 1993 .

Low temperature growth and characterization of ZnSe films grown on GaAs

A. Naumov, W. Kuhn, S. Bauer, 1993 .

The metal organic vapour phase epitaxy of ZnTe: III. Correlation of growth and layer properties

H. Dumont, A. Lusson, T. Reisinger, 1995 .

Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSb

W. Kuhn, H. Wagner, W. Gebhardt, 1990 .

Growth and photoluminescence investigations of phosphorus- and iodine-doped MOVPE ZnTe layers

A. Naumov, W. Kuhn, H. Wagner, 1993 .

FABRICATION AND ASSESSMENT OF WIRES AND DOTS IN ZnTe and ZnSe

C. Wilkinson, M. Foad, C. Torres, 1992 .

Investigation of strain in metalorganic vapor‐phase epitaxy grown ZnTe layers by optical methods

W. Limmer, W. Kuhn, H. Wagner, 1991 .

Investigation of strained ZnTe epilayers by high resolution electron microscopy

A. Rosenauer, J. Zweck, W. Kuhn, 1992 .

High-resolution dry etching of zinc telluride: characterization of etched surfaces by X-ray photoelectron spectroscopy, photoluminescence and Raman scattering

C. Wilkinson, M. Foad, C. Torres, 1991 .

Resonant photoluminescence measurements in As- and P-doped ZnTe epilayers

S. Lankes, A. Naumov, T. Reisinger, 1993 .

Resonant excitation of intrinsic and shallow trap luminescence in MOVPE grown ZnTe layers

D. Lichtenberger, S. Lankes, P. Link, 1992 .

Melting and Fining

Frank-Thomas Lentes, Ton Backx, R.G.C. Beerkens, 2002 .

The metal organic vapour phase epitaxy of ZnTe: II. Analysis of growth conditions

R. Triboulet, O. Gorochov, W. Kuhn, 1995 .

The MOVPE growth and doping of ZnTe

D. Lichtenberger, R. Triboulet, S. Lankes, 1991 .

Investigation of hydrogen, carbon and further impurities in the metalorganic vapour phase epitaxy of ZnSe with ditertiarybutylselenide and methylallylselenide

R. Driad, A. Lusson, O. Gorochov, 1994 .

The metal organic vapour phase epitaxy of ZnTe: I. Properties and decomposition kinetics of organometallics

O. Gorochov, W. Kuhn, B. Qu'Hen, 1995 .

Reflectivity and absorption of thin ZnTe epilayers near the exciton-polariton

W. Kuhn, H. Wagner, W. Gebhardt, 1991 .

Methylallyltelluride in the MOVPE of ZnTe: dissociation mechanisms and layer growth

A. Lusson, O. Gorochov, W. Kuhn, 1996 .

Thermal dissociation of ditertiarybutylselenide and methylallylselenide and its impact on the growth of ZnSe by metalorganic vapour phase epitaxy

O. Gorochov, W. Kuhn, B. Qu'Hen, 1995 .