M. Mckee

A synergistic approach to environmental concerns in large scale MOCVD processes

G. Tompa, A. Thompson, A. Gurary, 1994 .

Structural and electrical properties of InSb epitaxial films grown on GaAs by low-pressure MOCVD

Sang-Gi Kim, B. Yoo, E. Lee, 1993 .

Highly uniform InGaAsP/InP growth in a multiwafer rotating disk reactor by MOCVD

R. Stall, B. Yoo, M. Mckee, 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.

A parametric investigation of GaAs epitaxial growth uniformity in a high speed, rotating-disk MOCVD reactor

Gary S. Tompa, Richard A. Stall, P. Zawadzki, 1988 .

Design and operating characteristics of a metalorganic vapor phase epitaxy production scale, vertical, high speed, rotating disk reactor

W. Breiland, J. Hennessy, G. Tompa, 1994 .

Indium gallium arsenide microwave power transistors

G. A. Johnson, L. Messick, R. Stall, 1991 .

Structural and electrical properties of a strained InSb/GaAs heterostructure

T. W. Kim, B. Yoo, M. Mckee, 1994 .

Multi-wafer growth of highly uniform InGaP/GaAs by low pressure MOVPE

D. Walker, R. Stall, P. Norris, 1992 .

Design and applications of large area RDRs

Gary S. Tompa, Hui Chun Liu, Richard A. Stall, 1994 .

High frequency transistors on MOCVD grown InGaAs/InP

G. A. Johnson, L. Messick, R. Stall, 1990, International Conference on Indium Phosphide and Related Materials.

Uniform Growth of InSb on GaAs in a Rotating Disk Reactor by LPMOVPE

R. Stall, B. Yoo, M. Mckee, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

Growth of InGaAsP films in a Multi-Wafer high Speed Rotating Disk Reactor by Mocvd

R. Stall, P. Norris, M. Mckee, 1989 .