V. S. Lysenko

发表

Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperatures

Steve Hall, Octavian Buiu, Y. Lu, 2007, Microelectron. Reliab..

Extraction of charge trapping parameters in FD SOI MOSFET oxides subjected to gamma-irradiation

Denis Flandre, Stéphane Adriaensen, V. S. Lysenko, 2005 .

A comprehensive analysis of the high-temperature off-state and subthreshold characteristics of SOI MOSFETs

Valeriya Kilchytska, V. S. Lysenko, Tamara Rudenko, 2000 .

Development of Technology Profiles for the Transfer of Energy- and Resource Saving Technologies

V. S. Lysenko, 2015 .

Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2

V. S. Lysenko, A. N. Nazarov, V. I. Turchanikov, 2005, Microelectron. Reliab..

Photocurrent spectroscopy of Ge nanoclusters grown on oxidized silicon surface

V. S. Lysenko, S. V. Kondratenko, A. A. Mykytiuk, 2014, Photonics Europe.

Charge trapping and interface states in hydrogen annealed HfO2-Si structures

Yi Lu, Steve Hall, Octavian Buiu, 2007, Microelectron. Reliab..

Charge accumulation in the dielectric of the nanocluster NVM MOS structures under anti- and unipolar W/E window formation

Alexei Nazarov, Bernd Spangenberg, V. S. Lysenko, 2007, Microelectron. Reliab..

Transconductance and mobility behaviors in UTB SOI MOSFETs with standard and thin BOX

Denis Flandre, O. Faynot, Jean-Pierre Raskin, 2009 .

Effect of RF plasma treatment on moving and accumulation charge in SiO2 layers of Al-polySi-SiO2-Si structures

Valeriya Kilchytska, V. S. Lysenko, Alexei Nazarov, 1994 .

Effect of ionizing irradiation on electrical properties of buried multilayer dielectrics of SOI structures, obtained by ZMR technique

Tamara Rudenko, Valeriya Kilchytska, V. S. Lysenko, 1996 .

Functional Nanomaterials and Devices VII

Denis Flandre, V. S. Lysenko, Alexei Nazarov, 2014 .

Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection

L. Rebohle, I. N. Osiyuk, V. S. Lysenko, 2002, Microelectron. Reliab..

Effect of ionizing irradiation on the charge buildup in multilayer buried dielectrics of SOI structures

Tamara Rudenko, Valeriya Kilchytska, V. S. Lysenko, 1996 .

The influence of vacuum annealing temperature on the fundamental absorption edge and structural relaxation of a-SiC:H films

V. S. Lysenko, V. G. Stepanov, Alexei Nazarov, 2005 .

Semiconductor-On-Insulator Materials for Nanoelectronics Applications

Jean-Pierre Colinge, Jean-Pierre Raskin, V. S. Lysenko, 2011 .

Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism

Jean-Pierre Colinge, Tamara Rudenko, V. S. Lysenko, 1999, HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372).

Investigation of traps in the transition region of SiSiO2 structures at cryogenic temperatures

V. S. Lysenko, V. Lysenko, T. N. Sytenko, 1982 .

High-speed pyroelectric detector

V. S. Lysenko, A. S. Elizarov, E. N. Gergel, 1987 .

Light emission and charge trapping in Er-doped silicon dioxide films containing silicon nanocrystals

Wolfgang Skorupa, I. N. Osiyuk, V. S. Lysenko, 2005 .

Physical and Technical Problems of SOI Structures and Devices

Jean-Pierre Colinge, V. S. Lysenko, Alexei Nazarov, 1995 .

Experimental study of transconductance and mobility behaviors in ultra-thin SOI MOSFETs with standard and thin buried oxides

O. Faynot, Denis Flandre, Jean-Pierre Raskin, 2010 .

Nanoscaled Semiconductor-on-Insulator Structures and Devices

V. S. Lysenko, Alexei Nazarov, V. Lysenko, 2007 .

Electrical Characterization and Parameter Extraction of Junctionless Nanowire Transistors

Sylvain Barraud, Tamara Rudenko, V. S. Lysenko, 2016 .

EPR study of carbon and silicon related defects in carbon-rich hydrogenated amorphous silicon-carbon films

Yaroslav Koshka, V. S. Lysenko, V. Lysenko, 2010 .