S. Tewksbury

Island-edge effects of transistors fabricated in large-area laser micro-zone crystallized Si on insulator

M. A. Bosch, D. Herbst, S. Tewksbury, 1983, IEEE Electron Device Letters.

K$sup -$p BACKWARD SCATTERING FROM 1 TO 2.5 GeV/c.

A. Carroll, Y. Nagashima, F. Lobkowicz, 1969 .

K$sup +$p BACKWARD SCATTERING IN THE REGION FROM 1.0 TO 2.5 GeV/c.

A. Carroll, Y. Nagashima, F. Lobkowicz, 1968 .

π ± p Backward Scattering Between 1.5 and 3.0 BeV/ c

A. Carroll, Y. Nagashima, F. Lobkowicz, 1968 .

Precise Measurement of the K+K- Lifetime Ratio

Y. Nagashima, J. Fox, F. Lobkowicz, 1969 .