T. Harrington

A manufacturable 1.2 um double poly, double level metal CMOS process for a one-megabit DRAM

T. C. Chan, T. Harrington, M. Bayless, 1984, 1984 International Electron Devices Meeting.

A NEW SYNTHESIS OF 1-(2',6',6'-TRIMETHYLCYCLOHEXEN-1'-YL)-3-METHYLHEXA-1,3,5-TRIEN- 7-ONE (C18KETONE)

T. Harrington, N. A. Milas, 1947 .