M. G. Mil’vidskiĭ

发表

Production of Perfect Semiconductor Single Crystal by Crystallization from Melts

M. G. Mil’vidskiĭ, V. B. Osvenskiĭ, 1984 .

GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

N. B. Smirnov, A. I. Babanin, A. Polyakov, 2000 .

GaN 20-mm diameter ingots grown from melt-solution by seeded technique

N. B. Smirnov, A. I. Babanin, A. Polyakov, 1999 .

Deep centers in AlGaN-based light emitting diode structures

N. B. Smirnov, A. Polyakov, A. Govorkov, 1999 .

Deep levels studies of AlGaN/GaN superlattices

N. B. Smirnov, N. M. Shmidt, S. Pearton, 2003 .

Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering

V. A. Dravin, S. Pearton, A. Osinsky, 2002 .

Earth optimization of space experiment on growth of germanium by floating-zone technique with the use of rotating magnetic fields

M. G. Mil’vidskiĭ, É. S. Kopeliovich, A. Kartavykh, 2001 .

Effect of annealing on the electrical properties of nitrogen-doped silicon single crystals grown by crucibleless zone melting

V. Voronkov, M. G. Mil’vidskiĭ, A. V. Batunina, 2009 .

Shallow thermal donors in nitrogen-doped silicon single crystals

V. Voronkov, L. V. Arapkina, M. G. Mil’vidskiĭ, 2002 .

Thermally stimulated relaxation of misfit strains in Si1−xGex/Si(100) heterostructures with different buffer layers

F. Schäffler, T. Yugova, M. G. Mil’vidskiĭ, 2005 .

Semiconductor materials for present-day solid-state electronics

V. B. Ufimtsev, M. G. Mil’vidskiĭ, 2000 .

Evolution of the interface structure of bonded Si wafers after high temperature annealing

U. Gösele, P. Werner, E. Pippel, 2010 .

Scanning electron microscopy studies of double-layer silicon structures prepar by epitaxy and direct bonding

A. V. Govorkov, M. G. Mil’vidskiĭ, K. Enisherlova, 2006 .

New uncooled injection heterolaser emitting in the 1.5–1.8 μ range

P. Eliseev, B. Sverdlov, M. G. Mil’vidskiĭ, 1976 .

Effect of the sign of misfit strain on the formation of a dislocation structure in SiGe epitaxial layers grown on Si and Ge substrates

T. Yugova, V. Vdovin, M. G. Mil’vidskiĭ, 2005 .

Dislocation pattern formation in epitaxial structures based on SiGe alloys

L. K. Orlov, N. Abrosimov, A. Potapov, 1998 .

HETEROSTRUCTURES AND STRAINED SUPERLATTICES IN THE Ge-Si SYSTEM: GROWTH, STRUCTURE DEFECTS, AND ELECTRONIC PROPERTIES

L. K. Orlov, V. Vorotyntsev, O. Kuznetsov, 1996 .

Simulation of the stresses produced in large-diameter silicon wafers during thermal annealing

M. Mezhennyi, M. G. Mil’vidskiĭ, A. I. Prostomolotov, 2003 .

Dynamic properties of dislocations in silicon wafers heat-treated at low temperatures

M. Mezhennyi, V. Pavlov, M. G. Mil’vidskiĭ, 2001 .

Generation of thermal donors in silicon: Effect of self-interstitials

V. Voronkov, L. V. Arapkina, M. G. Mil’vidskiĭ, 2000 .

Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties

V. Chaldyshev, M. G. Mil’vidskiĭ, 1998 .

Experimental and theoretical investigation of formation of the oxygen-containing precipitate-dislocation loop system in silicon

R. Goldstein, K. Ustinov, M. Mezhennyi, 2011 .

Defect formation in Ge1−xSix/Ge(111) epitaxial heterostructures

T. Yugova, V. Vdovin, M. G. Mil’vidskiĭ, 2004 .

Quaternary Semiconducting-Compound Solid Solutions

M. G. Mil’vidskiĭ, L. M. Dolginov, 1987 .

Creation of defects during the growth of semiconductor single crystals and films

M. G. Mil’vidskiĭ, E. Bochkarev, 1978 .

A study of phase equilibria and heterojunctions in Ga–In–As–Sb quaternary system

P. Eliseev, M. G. Mil’vidskiĭ, L. M. Dolginov, 1978 .

Multicomponent semiconductor solid solutions and their laser applications (review)

P. Eliseev, M. G. Mil’vidskiĭ, L. M. Dolginov, 1976 .

The mechanism of Marangoni convection influence on dopant distribution in Ge space-grown single crystals

V. V. Rakov, V. I. Folomeev, M. G. Mil’vidskiĭ, 2001 .

Properties of Si donors and persistent photoconductivity in AlGaN

D. Greve, M. Skowronski, R. Wilson, 1998 .

Nature and singularities in the behavior of point defects in doped single crystals of A3B5 compounds

V. Bublik, M. G. Mil’vidskiĭ, V. B. Osvenskiĭ, 1980 .

Role of Growth Dislocations in Forming Inhomogeneous Properties in Gallium Arsenide Single Crystals

A. Markov, M. G. Mil’vidskiĭ, V. G. Osvenskii, 1992 .

Semiinsulating gallium arsenide for microwave electronics

M. G. Mil’vidskiĭ, V. B. Osvenskiĭ, I. N. Shershakova, 1983 .

Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy

N. B. Smirnov, D. Greve, M. Skowronski, 1998 .

Effect of alloy composition on defect formation in GexSi1−x/Si heterostructures obtained by molecular beam epitaxy

T. Yugova, V. Vdovin, M. G. Mil’vidskiĭ, 1994 .

Growth and properties of thin InGaAs epitaxial layers on InP

A. N. Osipova, A. Belogorokhov, M. G. Mil’vidskiĭ, 1997 .

Effect of the composition of the solid solution on the high-temperature microhardness of SiGe heteroepitaxial layers grown on Ge and Si substrates

M. Mezhennyi, T. Yugova, M. G. Mil’vidskiĭ, 2003 .

High-temperature microhardness of SiGe epitaxial layers grown on Ge and Si substrates

M. Mezhennyi, T. Yugova, M. G. Mil’vidskiĭ, 2002 .

Generation and motion of dislocations in silicon wafers subjected to multi-step annealing

M. Mezhennyi, R. Falster, M. G. Mil’vidskiĭ, 2002 .

Injection heterolaser based on InGaAsSb four-component solid solution

P. Eliseev, B. Sverdlov, M. G. Mil’vidskiĭ, 1978 .

A Technological Test of the Mir-Station Orbital Flight Modes for Semiconductor Single Crystal Growth

V. V. Rakov, M. G. Mil’vidskiĭ, É. S. Kopeliovich, 2001 .

Antiphase boundaries in GaAs layers on Si and Ge

T. Yugova, V. Vdovin, M. G. Mil’vidskiĭ, 1993 .

Evaluating intrinsic deformations in oxygen-containing precipitates

R. Goldstein, K. Ustinov, M. Mezhennyi, 2008 .

BRIEF COMMUNICATIONS: Luminescence and stimulated emission from Gaxln1-xAsySb1-y

P. Eliseev, B. Sverdlov, V. A. Chapnin, 1976 .

Scanning electron microscope studies of GaN films grown by hydride vapor phase epitaxy

N. B. Smirnov, A. Polyakov, A. Govorkov, 1999 .