K. Adachi

Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes

K. Kojima, H. Okumura, S. Ji, 2020 .

A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches

K. Kojima, H. Okumura, S. Ji, 2019, Materials Science Forum.

CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode

K. Kojima, H. Okumura, S. Ji, 2018, Materials Science Forum.

A copper/polyimide Metal-base packaging technology

K. Adachi, H. Takasago, M. Takada, 1989 .

Gibbs–Thomson effect on aluminum doping during trench-filling epitaxial growth of 4H-SiC

H. Okumura, S. Ji, Y. Yonezawa, 2019, Japanese Journal of Applied Physics.

Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

H. Okumura, S. Ji, Y. Yonezawa, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Single-crystalline 4H-SiC micro cantilevers with a high quality factor

Tsunenobu Kimoto, Hiroshi Yamaguchi, Jun Suda, 2013 .