Y. Kawada

Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes

K. Kojima, H. Okumura, S. Ji, 2020 .

A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches

K. Kojima, H. Okumura, S. Ji, 2019, Materials Science Forum.

CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode

K. Kojima, H. Okumura, S. Ji, 2018, Materials Science Forum.

Strong impact of slight trench direction misalignment from on deep trench filling epitaxy for SiC super-junction devices

K. Kojima, H. Okumura, S. Ji, 2017 .

Shape Control and Roughness Reduction of SiC Trenches by High-Temperature Annealing

N. Iwamuro, T. Tawara, Y. Kawada, 2009 .

High Performance SiC IEMOSFET/SBD Module

K. Fukuda, S. Harada, N. Iwamuro, 2012 .

Breaking the Theoretical Limit of 6.5 kV-Class 4H-SiC Super-Junction (SJ) MOSFETs by Trench-Filling Epitaxial Growth

H. Okumura, S. Ji, Y. Yonezawa, 2019, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Effect of Surface Structure on Transformation of 4H-SiC by High-Temperature Annealing

K. Akimoto, N. Iwamuro, T. Tawara, 2010 .

Anisotropic Transformation of 4H-SiC Etching Shapes by High-Temperature Annealing and Its Enhancement by Ion Implantation

Shun-ichi Nakamura, Takeshi Tawara, Yasuyuki Kawada, 2010 .