Fan Li

发表

Study of 4H-SiC Superjunction Schottky Rectifiers with Implanted P-Pillars

C. W. Chan, P. Mawby, V. Shah, 2019, Materials Science Forum.

On the Ti3SiC2 Metallic Phase Formation for Robust p-Type 4H-SiC Ohmic Contacts

C. Fisher, P. Mawby, Y. Sharma, 2014 .

4H-SiC Diode Avalanche Breakdown Voltage Estimation by Simulation and Junction Termination Extension Analysis

P. Mawby, Y. Sharma, M. Jennings, 2014 .

Main Differences in Processing Si and SiC Devices

M. Jennings, Fan Li, 2018, Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications.

3C-SiC Transistor With Ohmic Contacts Defined at Room Temperature

C. Fisher, P. Mawby, Y. Sharma, 2016, IEEE Electron Device Letters.

Experimental and Physics-Based Study of the Schottky Barrier Height Inhomogeneity and Associated Traps Affecting 3C-SiC-on-Si Schottky Barrier Diodes

M. Antoniou, M. Jennings, N. Lophitis, 2021, IEEE Transactions on Industry Applications.

The Improved Reliability Performance of Post-Deposition Annealed ALD-SiO2

P. Gammon, N. Grant, P. Mawby, 2022, Materials Science Forum.

Vertically aligned Gd2O2SO4:Ln and Gd2O2S:Ln luminescent films with super-hydrophobicity via a novel precursor route (Ln = Pr, Eu, Tb)

Zhuowei Li, Ji-guang Li, Xuejiao Wang, 2022, Applied Surface Science.

The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal

P. Mawby, M. Antoniou, V. Shah, 2021, Materials Science in Semiconductor Processing.

Design and fabrication of a power Si/SiC LDMOSFET for high temperature applications

C. W. Chan, D. Flandre, J. Gardner, 2017 .

ZrO2 and ZrO2-Y2O3 coatings deposited by double pulsed plasma arc

Fan Li, Weiping Yu, Lingkuan Meng, 2002 .

A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability

Amador Perez-Tomas, C. Fisher, P. Mawby, 2020, IEEE Transactions on Electron Devices.

Reliability Study of MOS Capacitors Fabricated on 3C-SiC/Si Substrates

P. Mawby, Song Qiu, M. Jennings, 2019 .

High Temperature Nitridation of 4H-SiC MOSFETs

P. Mawby, Y. Sharma, M. Jennings, 2016 .

Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition

P. Mawby, V. Shah, P. Gammon, 2020 .

Electrical activation of nitrogen heavily implanted 3C-SiC(1 0 0)

C. Fisher, P. Mawby, Y. Sharma, 2015 .

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

P. Mawby, G. Greco, F. Roccaforte, 2021, Materials.

Fabrication of 3C-SiC MOS Capacitors Using High-Temperature Oxidation

P. Mawby, Y. Sharma, S. M. Thomas, 2015 .

Ohmic Contact on n-Type 3C-SiC Activated with SiO2 Encapsulation

C. Fisher, P. Mawby, Y. Sharma, 2015 .

Thermal characterization of direct wafer bonded Si-on-SiC

P. Gammon, Martin Kuball, J. Pomeroy, 2022, Applied Physics Letters.

Development, characterisation and simulation of wafer bonded Si-on-SiC substrates

D. Flandre, V. Kilchytska, V. Pathirana, 2017 .

A study on free-standing 3C-SiC bipolar power diodes

P. Mawby, P. Gammon, A. Pérez‐Tomás, 2021 .

3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations

M. Antoniou, N. Lophitis, K. Gyftakis, 2022, IEEE Transactions on Industry Applications.

Physical Characterisation of 3C-SiC(001)/SiO2 Interface Using XPS

P. Mawby, Y. Sharma, M. Walker, 2016, 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM).

Improved Channel Mobility by Oxide Nitridation for N-Channel MOSFET on 3C-SiC(100)/Si

P. Mawby, Y. Sharma, V. Shah, 2016 .

Fabrication and Dielectric Breakdown of 3C-SiC/SiO2 MOS Capacitors

P. Mawby, Song Qiu, M. Jennings, 2019, 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives (SDEMPED).

Study of a novel lateral RESURF 3C-SiC on Si Schottky diode

Philip Mawby, C. Fisher, P. Mawby, 2014, 2014 16th European Conference on Power Electronics and Applications.

A novel 3C-SiC on Si power Schottky diode design and modelling

C. Fisher, P. Mawby, Y. Sharma, 2014 .

A Study of High Resistivity Semi-Insulating 4H-SiC Epilayers Formed via the Implantation of Germanium and Vanadium

M. Rommel, M. Antoniou, P. Gammon, 2022, Materials Science Forum.

Physical and Electrical Characterisation of 3C-SiC and 4H-SiC for Power Semiconductor Device Applications

C. Fisher, P. Mawby, Y. Sharma, 2014 .

On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes

C. Fisher, P. Mawby, Y. Sharma, 2014, 2014 16th European Conference on Power Electronics and Applications.

Enhanced Forward Bias Operation of 4H-SiC PiN Diodes Using High Temperature Oxidation

C. Fisher, P. Mawby, Y. Sharma, 2014 .

Electrical Characterisation of Thick 3C-SiC Layers Grown on Off-Axis 4H-SiC Substrates

R. Yakimova, P. Mawby, Y. Sharma, 2019, Materials Science Forum.

Surface Effects of Passivation within Mo/4H-SiC Schottky Diodes through MOS Analysis

P. Mawby, M. Walker, V. Shah, 2019, Materials Science Forum.