Xiaojuan Xia

A new physical insight of RESURF effects based on gradual charge appointment concept for bulk silicon lateral power devices

Yufeng Guo, Yabin Sun, Jun Zhang, 2016 .

Novel silicon-on-insulator lateral power device with step width drift region

Yufeng Guo, Jiafei Yao, Jun Zhang, 2015 .

Novel high-voltage LDMOS with linear graded drift region width

Yufeng Guo, Jiafei Yao, Jun Zhang, 2015, 2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).

Self-biased CMOS LC VCO based on trans-conductance linearisation technique

Lin He, Yu-feng Guo, Xiaojuan Xia, 2017 .