L. Phung

发表

BJT static behavior improvement by modification of the epitaxial layer

L. Théolier, J. Quoirin, Y. Raingeaud, 2010, 2010 27th International Conference on Microelectronics Proceedings.

Recent review on failures in silicon carbide power MOSFETs

L. Phung, D. Ngwashi, D. K. Ngwashi, 2021 .

Vertical termination filled with adequate dielectric for SiC devices in HVDC applications

H. Morel, D. Planson, J. Augé, 2015, 2015 International Semiconductor Conference (CAS).

Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors

D. Planson, P. Bevilacqua, C. Raynaud, 2019, Materials Science in Semiconductor Processing.

Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

Y. Cordier, C. Sonneville, A. Soltani, 2021, Energies.

Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation

D. Planson, Loris Pace, M. Hatano, 2017, IEEE Transactions on Electron Devices.

Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications

Y. Cordier, D. Planson, C. Sonneville, 2022, AIP Advances.

Monitoring Dynamic Resistance of AlGaN/GaN Schottky Diodes After Quasi-Static and Hard Switching Stresses

H. Morel, D. Planson, A. Yvon, 2022, 2022 International Semiconductor Conference (CAS).

Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)

D. Planson, P. Bevilacqua, C. Sonneville, 2019 .

Modelling of a symmetrical bipolar monolithic bidirectional switch

L. Ventura, J. Quoirin, L. Phung, 2009, 2009 13th European Conference on Power Electronics and Applications.

Deep Level Transient Fourier Spectroscopy (DLTFS) and Isothermal Transient Spectroscopy (ITS) in vertical GaN-on-GaN Schottky barrier diodes

H. Morel, Y. Cordier, D. Planson, 2022, Micro and Nanostructures.

Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes

H. Morel, Y. Cordier, D. Planson, 2022, Microelectron. J..

Transformer-Free, Off-the-Shelf Electrical Interface for Low-Voltage DC Energy Harvesting

Bertrand Massot, Mickaël Lallart, Luong Viêt Phung, 2018, IEEE Transactions on Industrial Electronics.

Micro-Raman Spectroscopy Study of Vertical GaN Schottky Diode

Y. Cordier, D. Planson, C. Sonneville, 2023, Crystals.

Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment

Thomas Santini, Sébastien Morand, Mitra Fouladirad, 2014, Microelectron. Reliab..

10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

H. Morel, D. Planson, L. Phung, 2019, Energies.

Effects of the laser beam size on the Optical Beam Induced Current (OBIC) for the study of Wide Band Gap (WBG) Semi-Conductor Devices

D. Planson, P. Bevilacqua, C. Sonneville, 2019 .

Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

D. Planson, D. Tournier, K. Isoird, 2014, 2014 International Semiconductor Conference (CAS).

Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration

F. Richardeau, H. Morel, D. Planson, 2023, International Conference on Mixed Design of Integrated Circuits and Systems.

Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications

Thomas Santini, Bruno Allard, Morand Sebastien, 2013, 2013 IEEE ECCE Asia Downunder.

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

H. Morel, M. Mermet-Guyennet, D. Planson, 2020 .