C. Ota

发表

Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

H. Ohashi, T. Hatakeyama, K. Kojima, 2008, IEEE Transactions on Electron Devices.

Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure

K. Kojima, H. Okumura, T. Shinohe, 2005 .

Experimental evaluation of 10kHz switching operation of 4.5kV–400A SiC-PiN diode and Si-IEGT hybrid pair module

K. Takao, K. Wada, H. Ohashi, 2013, 2013 IEEE Energy Conversion Congress and Exposition.

Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates

K. Takao, D. Okamoto, K. Fukuda, 2013 .

Informative Aspects of Molten KOH Etch Pits Formed at Basal Plane Dislocations on the Surface of 4H‐SiC

R. Iijima, Aoi Okada, J. Nishio, 2020, physica status solidi (a).

Triangular Single Shockley Stacking Fault Analyses on 4H-SiC PiN Diode with Forward Voltage Degradation

M. Kushibe, Aoi Okada, J. Nishio, 2020, Journal of Electronic Materials.

Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC Epilayers

M. Kushibe, Aoi Okada, J. Nishio, 2019 .

Dependences of contraction/expansion of stacking faults on temperature and current density in 4H-SiC p–i–n diodes

R. Iijima, H. Okumura, T. Shinohe, 2018 .

Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

H. Ohashi, T. Hatakeyama, K. Kojima, 2006 .

Origin and Generation Process of a Triangular Single Shockley Stacking Fault Expanding from the Surface Side in 4H-SiC PIN Diodes

R. Iijima, Aoi Okada, J. Nishio, 2021, Journal of Electronic Materials.

Permanent Fixation of Bending Deformation inWood by Heat Treatment

C. Ota, H. Akitsu, Tadashi, 2016 .

Physical Modeling and Scaling Properties of 4 H-SiC Power Devices 171 P-3

T. Hatakeyama, T. Shinohe, J. Nishio, 2022 .

Origin of Double-Rhombic Single Shockley Stacking Faults in 4H-SiC Epitaxial Layers

R. Iijima, J. Nishio, C. Ota, 2022, Journal of Electronic Materials.

Contribution of 90° Si-Core Partial Dislocation to Asymmetric Double-Rhombic Single Shockley-Type Stacking Faults in 4H-SiC Epitaxial Layers

R. Iijima, J. Nishio, C. Ota, 2023, Journal of Electronic Materials.

Transmission Electron Microscopy Study of Single Shockley Stacking Faults in 4H-SiC Expanded from Basal Plane Dislocation Segments Accompanied by Threading Edge Dislocations on both Ends

R. Iijima, J. Nishio, C. Ota, 2022, Materials Science Forum.

Structural study of single Shockley stacking faults terminated near substrate/epilayer interface in 4H-SiC

R. Iijima, J. Nishio, C. Ota, 2021, Japanese Journal of Applied Physics.

Conversion of Shockley partial dislocation pairs from unexpandable to expandable combinations after epitaxial growth of 4H-SiC

R. Iijima, J. Nishio, J. Nishio, 2021, Journal of Applied Physics.

Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC

R. Iijima, Aoi Okada, J. Nishio, 2020, Japanese Journal of Applied Physics.

Simulation, Fabrication and Characterization of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

H. Ohashi, T. Hatakeyama, K. Kojima, 2007 .

Direct confirmation of structural differences in single Shockley stacking faults expanding from different origins in 4H-SiC PiN diodes

R. Iijima, Aoi Okada, J. Nishio, 2020 .

Stacking Fault Expansion from an Interfacial Dislocation in a 4H-SiC PIN Diode and Its Expansion Process

R. Iijima, Aoi Okada, J. Nishio, 2023, Journal of Electronic Materials.

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

Kenji Fukuda, Toshihiko Hayashi, Makoto Mizukami, 2014 .

VF Degradation of 4H-SiC PiN Diodes Using Low-BPD Wafers

K. Takao, T. Shinohe, J. Nishio, 2014 .

Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)

K. Takao, H. Ohashi, T. Hatakeyama, 2009 .

1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

K. Takao, K. Fukuda, S. Harada, 2011 .

1360 V, 5.0 mΩcm2 Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1)

K. Fukuda, S. Harada, J. Senzaki, 2010 .

4.5kV-400A modules using SiC-PiN diodes and Si-IEGTs hybrid pair for high power medium-voltage power converters

K. Takao, K. Wada, H. Ohashi, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

Physical Modeling and Scaling Properties of 4H-SiC Power Devices

T. Hatakeyama, T. Shinohe, J. Nishio, 2005, 2005 International Conference On Simulation of Semiconductor Processes and Devices.

Initiation of Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diodes

R. Iijima, H. Okumura, Tomohisa Kato, 2019, Materials Science Forum.

Development of ultrahigh voltage SiC power devices

K. Takao, T. Kimoto, D. Okamoto, 2014, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).

Phase field model of single Shockley stacking fault expansion in 4H-SiC PiN diode

Y. Shibutani, K. Hirohata, Aoi Okada, 2021 .

Dynamics Analysis of Single Shockley Stacking Fault Expansion in 4H-SiC P-i-N Diode Based on Free Energy

K. Hirohata, Aoi Okada, A. Goryu, 2019, Materials Science Forum.

Evaluation of Effect of Mechanical Stress on Stacking Fault Expansion in 4H-SiC P-i-N Diode

K. Hirohata, S. Izumi, Aoi Okada, 2019, Materials Science Forum.