Yongjung Cho

发表

Degradation process by effect of water molecules during negative bias temperature stress in amorphous-InGaZnO thin-film transistor

O. Kim, Yeol-Hyeong Lee, Yongjung Cho, 2017 .

Defect-creation effects on abnormal on-current under drain bias illumination stress in a-IGZO thin-film transistors

O. Kim, Yongjung Cho, JeongKi Park, 2020 .

Relationship between Detrapping of Electrons and Negative Gate Bias during Recovery Process in a‐InGaZnO Thin Film Transistors

O. Kim, Yeol-Hyeong Lee, Yongjung Cho, 2019, physica status solidi (a).

Pulse duration effect during pulsed gate-bias stress in a-InGaZnO thin film transistors

O. Kim, Yongjung Cho, Woo-Sic Kim, 2019, Solid-State Electronics.

Abnormal behavior with hump characteristics in current stressed a-InGaZnO thin film transistors

O. Kim, Yeol-Hyeong Lee, Yongjung Cho, 2017 .

Severe hump phenomenon induced by increased charge trapping and suppression of electron capture effect in amorphous In-Ga-Zn-O thin-film transistors under unipolar pulsed drain bias with static positive gate bias stress

O. Kim, Yongjung Cho, JeongKi Park, 2020 .

Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

O. Kim, Yeol-Hyeong Lee, Yongjung Cho, 2018, Solid-State Electronics.

Effect of illumination on the hump phenomenon in I–V characteristics of amorphous InGaZnO TFTs under positive gate‐bias stress

O. Kim, Byeong-Koo Kim, Yeol-Hyeong Lee, 2017 .

Effect of Wavelength and Intensity of Light on a-InGaZnO TFTs under Negative Bias Illumination Stress

O. Kim, Byeong-Koo Kim, Yeol-Hyeong Lee, 2017 .