Chi-Hsin Huang

发表

Low-Temperature Solution-Processed n-Channel SnO2 Thin-Film Transistors and High-Gain Zero-VGS-Load Inverter

K. Nomura, H. Chang, Chi-Hsin Huang, 2021, ACS Applied Electronic Materials.

Tunable multilevel storage of complementary resistive switching on single-step formation of ZnO/ZnWO(x) bilayer structure via interfacial engineering.

Y. Chueh, Yu-Chuan Shih, Jian-Shiou Huang, 2014, ACS applied materials & interfaces.

Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors.

K. Nomura, H. Chang, Chi-Hsin Huang, 2020, ACS applied materials & interfaces.

Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays

Y. Chueh, Jian-Shiou Huang, Shih-Ming Lin, 2017, Scientific Reports.

Reconfigurable Artificial Synapses with Excitatory and Inhibitory Response Enabled by an Ambipolar Oxide Thin-Film Transistor.

K. Nomura, Chi-Hsin Huang, Yong Zhang, 2022, ACS applied materials & interfaces.

Dual-gated ambipolar oxide synaptic transistor for multistate excitatory and inhibitory responses

K. Nomura, Chi-Hsin Huang, Yong Zhang, 2022, Applied Physics Letters.

Vacuum-Free Liquid-Metal-Printed 2D Indium-Tin Oxide Thin-Film Transistor for Oxide Inverters.

K. Nomura, Chi-Hsin Huang, Yalun Tang, 2022, ACS nano.

Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing.

K. Nomura, Y. Chueh, H. Chang, 2021, ACS applied materials & interfaces.

Resistive switching memory effects in p-type hydrogen-treated CuO nanowire

K. Nomura, Chi-Hsin Huang, K. Matsuzaki, 2020 .

Switching Mechanism behind the Device Operation Mode in SnO‐TFT

K. Nomura, Chi-Hsin Huang, K. Matsuzaki, 2020, Advanced Electronic Materials.

Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter.

K. Nomura, Y. Chueh, Chi-Hsin Huang, 2021, ACS applied materials & interfaces.

Single CuO(x) nanowire memristor: forming-free resistive switching behavior.

Y. Chueh, S. Lo, Yu-Chuan Shih, 2014, ACS applied materials & interfaces.

Resistive switching of Sn-doped In2O3/HfO2 core-shell nanowire: geometry architecture engineering for nonvolatile memory.

Yu-Lun Chueh, Chi-Hsin Huang, Shih-Ming Lin, 2017, Nanoscale.

Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate.

Y. Chueh, Jian-Shiou Huang, Chi-Hsin Huang, 2013, ACS applied materials & interfaces.

ZnO1-x nanorod arrays/ZnO thin film bilayer structure: from homojunction diode and high-performance memristor to complementary 1D1R application.

Yu-Lun Chueh, Chi-Hsin Huang, Wen-Yuan Chang, 2012, ACS nano.

Voltage Transfer Characteristics of CMOS-Like Inverters for Ambipolar SnO Thin-Film Transistors

K. Nomura, Chi-Hsin Huang, Yong Zhang, 2022, IEEE Electron Device Letters.

Experimental demonstration of single-mode topological valley-Hall lasing at telecommunication wavelength controlled by the degree of asymmetry.

B. Kanté, Hwi-Min Kim, H. Nasari, 2020, Optics letters.

ZnO nanoparticle-decorated HfO2/Sn-doped In2O3 core–shell nanowires by atomic layer deposition: enhancement of field emission behavior by surface modification engineering

Y. Chueh, Wen-Chih Chang, Chi-Hsin Huang, 2014 .

Threshold switching of non-stoichiometric CuO nanowire for selector application

K. Nomura, Chi-Hsin Huang, K. Matsuzaki, 2020 .

Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

Y. Chueh, Yu-Chuan Shih, Jian-Shiou Huang, 2017 .

Single-step formation of ZnO/ZnWO(x) bilayer structure via interfacial engineering for high performance and low energy consumption resistive memory with controllable high resistance states.

Yu-Lun Chueh, Chi-Hsin Huang, Shih-Ming Lin, 2013, ACS applied materials & interfaces.