H. Seul

Solution-processed ternary alloy aluminum yttrium oxide dielectric for high performance indium zinc oxide thin-film transistors

Jae Kyeong Jeong, Jiwon Lee, H. Seul, 2018 .

A solution-processed silicon oxide gate dielectric prepared at a low temperature via ultraviolet irradiation for metal oxide transistors

Jae Kyeong Jeong, Mansoo Park, H. Seul, 2016 .

Atomic-layer-deposition process enabled carrier mobility boosting in field-effect transistors through a nanoscale ZnO/IGO heterojunction.

Min Jae Kim, Jae Kyeong Jeong, Woobin Song, 2020, ACS applied materials & interfaces.

High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach.

Min Jae Kim, Jae Kyeong Jeong, Hoichang Yang, 2020, ACS applied materials & interfaces.

Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.

H. Seul, J. Jeong, C. Choi, 2021, ACS applied materials & interfaces.

P‐7: Highly‐Ordered Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Atomic Layer Deposition Process.

Jae Kyeong Jeong, N. On, H. Seul, 2019, SID Symposium Digest of Technical Papers.

Oxide Thin-Film Transistors for OLED Displays

Min Jae Kim, H. Seul, J. Jeong, 2021 .